Semiconductor Module 3D Stacked RAM Interposer Bandwidth
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Solution Overview
Problem
The increasing performance of logic chips and data capacity requires improved communication bandwidth between logic chips and RAM, which existing technologies struggle to achieve due to limitations in miniaturization and 2D memory capacity.
Innovation Solution
A semiconductor module design featuring a logic chip, laminated RAM units, and interposers for direct electrical connection, with interface chips and heat sink units for efficient power supply and data communication, allowing for increased bandwidth and capacity while reducing manufacturing complexity and costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of memory cells is increased by miniaturization and plane expansion, then memory capacity increases, but noise susceptibility increases and die area increases
Solution Approach 1:
The patent transitions from 2D planar memory expansion to 3D stacked memory architecture by laminating multiple memory chips vertically. This dimensional change allows capacity increase without increasing die area or miniaturizing cells to the point of noise susceptibility. The stacked configuration maintains signal integrity while achieving higher capacity through vertical stacking of multiple memory layers.
Solution Approach 2:
The memory system is segmented into multiple independent memory chips stacked vertically, each chip maintaining its own cell array and control logic. This segmentation allows each chip to operate independently with optimized cell sizes, avoiding the noise issues that would result from excessive miniaturization in a single large chip while achieving high total capacity through the stacked configuration.
2Productivity
If logic chip performance and data capacity are increased, then computational capability improves, but communication bandwidth between logic chip and RAM becomes insufficient
Solution Approach 1:
The patent merges the logic chip and memory chips into a single integrated package with direct interconnections. The logic chip is positioned to directly interface with multiple memory chips in the stack, creating high-speed communication pathways. This merging eliminates external interface bottlenecks and provides sufficient bandwidth to support high-performance computing operations.
Solution Approach 2:
An interposer or substrate is introduced as an intermediary between the logic chip and memory chips, providing high-speed signal routing and electrical connections. This intermediary structure enables direct memory access with high bandwidth, supporting the increased computational capability of advanced logic chips.
3Quantity of substance
If multiple memory chips are laminated to form 3D structure, then memory capacity increases, but manufacturing complexity increases
Solution Approach 1:
The memory system is divided into separate, standardized memory chips that can be manufactured independently using conventional processes. Each chip is a discrete unit with standardized interfaces, allowing modular assembly into the 3D stacked structure. This segmentation simplifies manufacturing by enabling independent optimization and testing of each chip before final assembly.
Solution Approach 2:
The patent employs universal interface standards and standardized chip dimensions that allow the same memory chip design to be used in multiple configurations and applications. This universality simplifies manufacturing by reducing the number of unique components needed and enabling standardized assembly processes for the stacked memory structure.
Data Source
AI summary
The present invention provides a semiconductor module capable of improving a bandwidth between a logic chip and a RAM. According to the present invention, a semiconductor module 1 is provided with: a logic chip; a pair of RAM units 30 each composed of a lamination-type RAM module; a first interposer 10 electrically connected to the logic chip and to each of the pair of RAM units 30; and a connection unit 40 that communicatively connects the logic chip and each of the pair of RAM units 30, wherein one RAM unit 30a is placed on the first interposer 10, and has one end portion disposed so as to overlap, in the lamination direction C, one end portion of the logic chip with the connection unit 40 therebetween, and the other RAM unit 30b is disposed so as to overlap the one RAM unit 30a with the connection unit 40 therebetween, and is also disposed along the outer periphery of the logic chip.