Semiconductor Module Substrate Roughness for Resin Delamination Resistance
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Solution Overview
Problem
Existing semiconductor modules face delamination issues between insulated substrates and sealing resins due to inadequate bonding strength, especially under high temperatures, despite surface roughening techniques being explored, the bonding properties remain insufficient.
Innovation Solution
A semiconductor module with an insulated substrate surface roughened to specific average roughness values (0.15 μm or greater in a 300-μm-wide range and 0.02 μm or greater in a 3-μm-wide range) using wet blasting and brazing material application, followed by etching to enhance bonding with the sealing resin, ensuring improved anchoring and durability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the surface of the insulated substrate is roughened to increase anchoring effect, then bonding strength with sealing resin is improved, but delamination still occurs under high temperature due to insufficient bonding properties
Solution Approach 1:
The invention changes the surface roughness parameters of the insulated substrate by controlling the average roughness Ra to be 0.1 μm or more but 1.0 μm or less. This specific parameter range optimizes the anchoring effect for sealing resin bonding while preventing delamination under high temperature conditions, resolving the contradiction between initial bonding strength and long-term bonding reliability.
Solution Approach 2:
The surface roughening treatment is performed in advance before sealing resin application. By pre-establishing the optimal surface roughness profile (Ra ≥ 0.1 μm and Ra ≤ 1.0 μm), the substrate is prepared to maximize bonding strength and prevent future delamination, addressing both bonding strength and reliability requirements.
2Strength
If the surface roughness is increased to enhance anchoring effect, then bonding strength is improved, but excessive roughness may cause adverse effects
Solution Approach 1:
The invention defines a specific surface roughness parameter range (Ra ≥ 0.1 μm and Ra ≤ 1.0 μm) that optimizes bonding strength while avoiding the harmful effects of excessive roughness. This controlled parameter change ensures the surface provides sufficient anchoring for the sealing resin without creating defects or weakness points.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The enhanced surface roughness significantly improves bonding strength between the insulated substrate and sealing resin, maintaining high bonding strength even at high temperatures and suppressing delamination, thereby increasing the durability of the semiconductor module.
Implementation Method 1
bonding strength between the insulated substrate and sealing resin
Implementation Method 2
roughening the surface of an insulated substrate to heighten an anchoring effect
Data Source
AI summary
Provided are a semiconductor module in which bonding properties between an insulated substrate and a sealing resin is improved and a method for manufacturing the semiconductor module. A semiconductor module 50 is provided with: an insulated substrate 23; a circuit pattern 24 that is formed on the insulated substrate; semiconductor elements 25, 26 that are joined on the circuit pattern; and a sealing resin 28 for sealing the insulated substrate, the circuit pattern, and the semiconductor elements. The surface 23a of the insulated substrate in a part where the insulative substrate and the sealing resin are bonded to each other, is characterized in that, in a cross section of the insulated substrate, the average roughness derived in a 300-μm wide range is 0.15 μm or greater and the average roughness derived in a 3-μm-wide range is 0.02 μm or greater.