Full-Bridge Semiconductor Module Layout for Accurate Temperature Sensing
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Solution Overview
Problem
Existing semiconductor modules, particularly those using wideband gap semiconductor elements, face challenges in accurately detecting temperature due to high heat generation, necessitating improved temperature detection methods.
Innovation Solution
A semiconductor module design with a full bridge circuit configuration, including temperature detection elements and specific wiring patterns, reduces parasitic capacitance and noise interference by positioning the temperature detection element within the switching paths and balancing parasitic capacitances between wiring patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a temperature detection element is added to detect temperature in the semiconductor module, then temperature detection capability is improved, but noise from parasitic capacitance between wiring patterns and detection wiring increases measurement precision degradation
Solution Approach 1:
The patent extracts the temperature detection element from the peripheral edge location to the center region of the semiconductor module, surrounded by switching paths. This repositioning separates the detection element from the noisy peripheral wiring patterns while placing it in a region where it can still effectively monitor junction temperatures of multiple semiconductor elements.
Solution Approach 2:
The patent creates equipotential regions by strategically placing wiring patterns at different potentials around the temperature detection element. The detection element is positioned in a region surrounded by switching paths, and wiring patterns are arranged to balance parasitic capacitances, effectively creating equipotential zones that minimize noise coupling to the sensitive detection wiring.
2Device complexity
If the temperature detection element is placed on the peripheral edge for simple layout, then device complexity is reduced, but temperature detection accuracy deteriorates due to distance from heat generation sources
Solution Approach 1:
The patent transitions from a two-dimensional peripheral placement to a three-dimensional spatial arrangement where the temperature detection element is positioned in the center region surrounded by switching paths on multiple sides. This dimensional change allows the detection element to be closer to multiple heat generation sources simultaneously while maintaining layout manageability through systematic wiring pattern arrangement.
3Object-affected harmful factors
If wiring patterns are arranged to balance parasitic capacitance, then noise reduction is achieved, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs asymmetric wiring pattern arrangements in specific regions to compensate for parasitic capacitance imbalances. Rather than requiring perfect symmetry throughout, the design uses targeted asymmetric adjustments in wiring lengths and positions to achieve overall capacitance balance, reducing the cumulative precision requirements across all manufacturing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enables accurate and stable temperature detection by minimizing noise interference, ensuring a stable output voltage from the temperature detection element.
Implementation Method 1
a temperature detection element (90) having a first temperature detection electrode (91) and a second temperature detection electrode (92)
Implementation Method 2
A current path that is formed when both the first semiconductor element and the fourth semiconductor element are turned on and includes a first current path that extends from the first power source terminal to the first intermediate point terminal and a second current path that extends from the second intermediate point terminal to the second power source terminal is set as a first switching path
Data Source
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AI summary
[Problem] To provide a semiconductor module capable of performing the temperature detection more accurately. [Means] A semiconductor module 1 includes first to fourth semiconductor elements Q1 to Q4, a plurality of wiring patterns, a first power source terminal 51, second power source terminals 52, 53, a first intermediate point terminal 61 and a second intermediate point terminal 62, and a full bridge circuit is formed in the semiconductor module 1. The semiconductor module 1 further includes a temperature detection element 90; first and second temperature detection wiring patterns 93, 94; and first and second temperature detection terminals T1, T2. The temperature detection element 90 is disposed in a region surrounded by a first switching path A and a second switching path B. The semiconductor module 1 is configured to reduce noises caused by a parasitic capacitance between a second wiring pattern 20 and a first temperature detection wiring pattern 93, and a parasitic capacitance between a fourth wiring pattern 40 and a first temperature detection wiring pattern 93.