Semiconductor Module Layout for IGBT-Diode Thermal Balancing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor modules, temperature variations between devices such as IGBTs and diodes in converter circuits lead to limited maximum output current due to junction temperature issues, particularly in NPC and ANPC circuits where voltage and current distributions are not uniform.
Innovation Solution
A semiconductor module with a converter circuit that includes parallel connection structures of IGBTs and diodes, where at least one structure is a reverse conducting IGBT, allowing heat generated by switching devices to diffuse into diodes, thereby reducing temperature variations and suppressing heat-related issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If conventional NPC or ANPC circuits are used with separate IGBT and diode devices, then the circuit can achieve voltage conversion functionality, but temperature variations occur between devices leading to limited maximum output current
Solution Approach 1:
The patent combines the IGBT and diode devices into a single integrated parallel connection structure where both devices share the same physical housing and thermal environment. This merging allows heat generated by the IGBT to be conducted to the diode, equalizing temperatures between the two device types and enabling higher output current without being limited by temperature variations.
2Reliability
If IGBT and diode devices are connected in parallel with non-uniform voltage and current distribution, then the converter circuit can function, but uneven heat generation causes some devices to exceed maximum junction temperature
Solution Approach 1:
By integrating multiple IGBTs and diodes into a single parallel connection structure housed together, the patent creates a unified thermal management system. This merging simplifies temperature control because all devices in the structure share common thermal pathways, making it easier to manage junction temperatures despite non-uniform voltage and current distributions.
Solution Approach 2:
The patent introduces a common housing or thermal interface as an intermediary between the IGBT and diode devices. This intermediary structure facilitates heat conduction from the IGBT to the diode, acting as a thermal mediator that balances temperatures across the parallel connection structure and prevents any single device from exceeding maximum junction temperature.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces temperature variations between devices, enhancing the semiconductor module's performance by allowing heat generated by switching devices to dissipate into diodes, thus preventing excessive temperature rises and improving overall output current capabilities.
Implementation Method 1
heat generated by switching devices to diffuse into diodes, thereby reducing temperature variations
Data Source
AI summary
A semiconductor module, including a converter circuit configured to generate an alternating-current (AC) voltage from a direct-current (DC) voltage input thereto, by receiving a first potential that is positive, a second potential that is negative, and a third potential lower than the first potential and higher than the second potential. The converter circuit includes a plurality of parallel connection structures, each parallel connection structure including an insulated gate bipolar transistors (IGBT) and a diode device connected in parallel. At least one of the parallel connection structures includes a reverse conducting IGBT.