Semiconductor Module Encapsulation for Thermal Stress Insulation
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Solution Overview
Problem
Existing semiconductor modules face challenges in achieving optimal sealing and protection due to variations in resin hardness and thermal expansion coefficients, which can lead to insulation failures and mechanical stress.
Innovation Solution
A semiconductor module with a three-layer encapsulation resin structure, where each layer is made of materials with different properties to improve hardness, waterproofness, and thermal stability from bottom to top, thereby enhancing the module's insulation and mechanical robustness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single-layer resin encapsulation is used, then the manufacturing process is simple, but the insulation and waterproofing performance are insufficient under thermal stress
Solution Approach 1:
The encapsulation resin is divided into three distinct layers with different hardness values and thermal expansion coefficients. The first layer (bottom) has high hardness for mechanical support, the second layer (middle) has intermediate properties for stress buffering, and the third layer (top) has low hardness for shock absorption. This segmentation allows each layer to perform its specific function optimally, resolving the contradiction between reliability and structural complexity.
Solution Approach 2:
The patent employs composite material construction by combining three different resin materials with progressively decreasing hardness from bottom to top. This composite structure leverages the advantages of each material - the hard bottom layer provides structural integrity and insulation, while the softer upper layers provide flexibility and thermal stress management, achieving superior overall performance.
2Strength
If hard resin is used for mechanical strength, then structural robustness is improved, but thermal stress and insulation failure risk increase
Solution Approach 1:
Different regions of the encapsulation structure are assigned different material properties tailored to their specific functional requirements. The bottom layer uses hard resin for mechanical support and insulation where strength is critical, while the top layer uses soft resin for shock absorption and thermal stress relief where flexibility is needed. This local differentiation resolves the contradiction between strength and reliability.
Solution Approach 2:
The patent systematically varies the hardness parameter and thermal expansion coefficient across the three layers. By creating a gradient from hard to soft materials from bottom to top, the structure achieves both mechanical strength at the base and thermal stress management at the upper layers, preventing insulation failure while maintaining structural integrity.
3Stability of the object's composition
If soft resin is used for shock absorption, then mechanical stress resistance is improved, but structural support and insulation capability deteriorate
Solution Approach 1:
The encapsulation is segmented into three layers with differentiated hardness values. The bottom layer maintains high hardness for structural support, the middle layer provides intermediate stress buffering, and the top layer offers softness for shock absorption. This segmentation allows the structure to simultaneously achieve both structural strength and stress resistance without compromise.
Data Source
AI summary
Providing a semiconductor module, including: a laminated substrate; multiple semiconductor chips provided on the laminated substrate; a bonding wire connected to the multiple semiconductor chips; a housing which accommodates the multiple semiconductor chips, the bonding wire, and the laminated substrate; a first encapsulation layer which covers the multiple semiconductor chips, the bonding wire, and the laminated substrate inside the housing; a second encapsulation layer provided on the first encapsulation layer; and a third encapsulation layer provided on the second encapsulation layer. The first encapsulation layer is filled inside the housing up to a position higher than an upper surface of the bonding wire, and hardness of the second encapsulation layer is greater than hardness of the first encapsulation layer and less than hardness of the third encapsulation layer.