Semiconductor Module Heat Dissipation via Third Wiring Pillars
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Solution Overview
Problem
Existing semiconductor power modules face challenges in efficiently dissipating heat generated by semiconductor devices, which can lead to reliability issues and potential malfunctions.
Innovation Solution
The semiconductor module incorporates a substrate with high thermal conductivity, coupled with intermediate layers and a third wiring structure that includes a plate part and pillar or wall part to enhance heat dissipation without increasing the package area, using materials like ceramic layers and insulating thermally conductive resin layers for effective heat transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a conventional ceramic substrate with copper foil is used for heat dissipation, then the structure is simple and easy to manufacture, but the heat dissipation efficiency is insufficient
Solution Approach 1:
The heat dissipation function is segmented into multiple independent paths: the substrate ground pattern, the third wiring with pillar/wall parts, and the heat sink. This segmentation allows each component to specialize in heat transfer, improving overall efficiency without requiring a complete structural overhaul
Solution Approach 2:
The third wiring introduces a vertical dimension to heat dissipation through pillar parts or wall parts that extend from the substrate upward to connect with the heat sink. This three-dimensional heat transfer path complements the traditional two-dimensional substrate-based dissipation, enabling more efficient heat removal without increasing package footprint
2Loss of energy
If additional heat dissipation structures are added, then heat dissipation efficiency improves, but the package area increases
Solution Approach 1:
The third wiring structure serves dual purposes: it provides electrical connection between the semiconductor device and external terminals while simultaneously functioning as a heat dissipation pathway through its pillar/wall parts. This multi-functionality eliminates the need for separate heat dissipation structures that would occupy additional space
Solution Approach 2:
By utilizing the vertical dimension through pillar parts or wall parts, the invention creates heat dissipation pathways that extend upward rather than outward. This allows heat to be transferred from the substrate through the third wiring to the heat sink without requiring additional lateral space, thus maintaining a compact package footprint
3Loss of energy
If the third wiring with pillar or wall part is added, then heat dissipation efficiency improves, but the device complexity increases
Solution Approach 1:
The third wiring merges the electrical connection function and heat dissipation function into a single integrated structure. The pillar parts or wall parts serve both as conductive pathways for electrical signals and as thermal pathways for heat transfer, eliminating the need for separate components and reducing overall device complexity despite the enhanced functionality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the reliability of semiconductor modules by efficiently dissipating heat, reducing the likelihood of malfunctions, and allowing for cooling without additional space, thereby enhancing the module's performance in applications such as wind turbine generators and photovoltaic systems.
Implementation Method 1
The substrate has a back surface on a side opposite to a surface on which the semiconductor devices are mounted. The exterior is coupled to the back surface of the substrate. The substrate dissipates heat from the semiconductor devices to the exterior.
Implementation Method 2
The third wiring has thermal conductivity due to coupling of the plate part and the substrate via the pillar part or the wall part.
Data Source
AI summary
A semiconductor module includes a substrate, a first semiconductor device, a second semiconductor device, a first wiring, a second wiring, a first intermediate layer, a second intermediate layer, and a third wiring. The first semiconductor device is provided on the substrate. The first semiconductor device has a first surface facing the substrate and has a second surface on a side opposite to the first surface. The second semiconductor device is adjacent to the first semiconductor device and is provided on the substrate. The second semiconductor device has a first surface facing the substrate and has a second surface on a side opposite to the first surface. The first wiring is provided on the second surface of the first semiconductor device and is coupled to the second surface of the first semiconductor device. The second wiring is provided on the second surface of the second semiconductor device and is coupled to the second surface of the second semiconductor device. The first intermediate layer is provided on the first wiring and is coupled to the first wiring. The second intermediate layer is provided on the second wiring and is coupled to the second wiring. The third wiring has a plate part on the first intermediate layer and on the second intermediate layer. The plate part is coupled to the first intermediate layer and to the second intermediate layer. The third wiring has a pillar part or a wall part between the plate part and the substrate. The third wiring has thermal conductivity due to coupling of the plate part and the substrate via the pillar part or the wall part.