Power Semiconductor Module Series Voltage Equalization
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Solution Overview
Problem
Conventional power semiconductor modules with high withstand-voltage IGBTs face challenges in driving multiple switching elements in series, leading to difficulties in achieving equal element voltages, which results in element breakdowns and high production costs due to the need for various module types in small quantities, hindering mass production.
Innovation Solution
A power semiconductor module configuration featuring a 2-in-1 or 4-in-1 module design with pairs of diode and MOS switching elements connected in inverse parallel, including external electrode terminals, resistors, overvoltage clamping elements, and voltage fixing elements to ensure equal gate and drain potentials, allowing for series and parallel connections to achieve high withstand voltages while enabling mass production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If multiple IGBT switching elements are connected in series to achieve high withstand voltage, then the withstand voltage capability is improved, but it becomes difficult to equalize element voltages and prevent breakdown
Solution Approach 1:
The patent introduces voltage equalization circuits as intermediary components between series-connected IGBT elements. These circuits include resistors connected in parallel with each IGBT collector-emitter path, and active voltage equalization circuits that detect voltage imbalances and actively compensate for them, ensuring equal voltage distribution across all series elements.
Solution Approach 2:
The patent modifies operating parameters by controlling the collector current change ratio (di/dt) of each IGBT element to be equal during switching operations. This parameter control approach, combined with using IGBTs having equal collector-emitter breakdown voltages, ensures uniform voltage stress distribution across all series-connected elements.
2Adaptability or versatility
If multiple types of power semiconductor modules are developed for different voltage specifications, then the adaptability to different applications is improved, but the manufacturing complexity and cost increase
Solution Approach 1:
The patent designs a universal power semiconductor module with a standardized structure that can be configured for different voltage levels by simply changing the number of IGBT elements connected in series. The module uses a common substrate, standardized connection terminals, and generic voltage equalization circuits that work across different configurations, eliminating the need for separate development of different module types.
Solution Approach 2:
The patent divides the power semiconductor module into modular, interchangeable elements (IGBT chips, diodes, and voltage equalization circuit units) that can be independently manufactured and then assembled in different series combinations to achieve different voltage ratings, allowing a single production line to serve multiple applications.
3Adaptability or versatility
If multiple types of power semiconductor modules are manufactured in small quantities for different specifications, then the adaptability is improved, but the mass production effect is lost and cost increases
Solution Approach 1:
The patent creates a universal module platform with standardized components, mounting structures, and packaging that can be produced in large quantities on a single production line. The same manufacturing process and assembly procedures are used regardless of whether the final module is configured for 1.7kV, 3.3kV, 6.5kV, or other voltage levels, enabling mass production effects while maintaining versatility.
Data Source
AI summary
A pair of elements that includes a Si-MOSFET and a Si-FWD connected in inverse parallel and operates as a positive side arm of an electric-power conversion apparatus and a pair of elements that operates as a negative side arm of the electric-power conversion apparatus are provided, where the first and second pairs of elements are accommodated in one power semiconductor module to compose a 2-in-1 module, and terminals are included which enables series connection of the pairs of elements.