Moisture-Barrier Semiconductor Packaging for High-Voltage Stability

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Solution Overview

Problem

Semiconductor devices with high rating voltages fail to maintain stability under high temperature and high humidity conditions due to moisture ingress, leading to dielectric breakdown and reduced withstand time.

Innovation Solution

A semiconductor device design incorporating a substrate, mounting layers, switching elements, a moisture-resistant layer, and a sealing resin, where the moisture-resistant layer covers the side surfaces of the switching elements and is in contact with the mounting layer, forming a barrier against moisture ingress.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If a semiconductor device uses high rating voltage to meet performance requirements, then the device can handle higher power demands, but the withstand time under high temperature and high humidity conditions deteriorates due to moisture ingress causing dielectric breakdown

Engineering Contradiction:
Improverating voltageVSAvoidwithstand time
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The sealing structure is divided into multiple layers: an outer sealing resin layer and an inner moisture-resistant layer. This segmentation allows each layer to perform its specific function - the sealing resin provides overall encapsulation while the moisture-resistant layer specifically blocks moisture ingress, thereby protecting high voltage switching elements from dielectric breakdown in humid environments

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A moisture-resistant layer is introduced as an intermediary barrier between the external humid environment and the internal switching elements. This intermediate layer prevents moisture from reaching the switching elements, thereby maintaining dielectric strength and reliability under high temperature and high humidity conditions

Inventive Principle:
Principle #24Intermediary (Mediator)

2Device complexity

If the sealing resin is directly applied to switching elements without additional protective layers, then the device structure remains simple, but moisture ingress causes dielectric breakdown and reduces withstand time

Engineering Contradiction:
Improvesealing structureVSAvoidwithstand time
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The sealing structure uses a composite of two different materials: sealing resin (providing mechanical encapsulation and environmental sealing) and moisture-resistant layer (providing specific moisture barrier properties). This composite structure leverages the complementary strengths of both materials to achieve superior moisture protection while maintaining structural integrity

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The moisture-resistant layer is implemented as a thin film structure that conformally covers the switching elements and fills grooves. This thin film approach provides effective moisture barrier protection without significantly increasing device volume or complexity, while ensuring complete coverage of vulnerable surfaces

Inventive Principle:
Principle #30Flexible shells and thin films

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances the stability and withstand time of semiconductor devices under high temperature and high humidity conditions by preventing moisture-induced dielectric breakdown, ensuring compliance with H3TRB test criteria.

Implementation Method 1

the moisture-resistant layer covers at least one of the side surfaces... The moisture-resistant layer is held in contact with both of the mounting layer and the side surface so as to be spanned between the mounting layer and the side surface in the thickness direction

Methodology Applied
Scientific EffectMoisture resistance barrier: Adsorption

Data Source

PatentUS12401000B2Semiconductor device
Publication Date: 2025.08.26 ROHM CO LTD
  • US12401000B2 patent drawing
  • US12401000B2 patent drawing
  • US12401000B2 patent drawing

AI summary

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a mounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer. The moisture-resistant layer is held in contact with the mounting layer and the side surface so as to be spanned between the mounting layer and the side surface in the thickness direction.