Semiconductor Device Moisture Protection via Concave Conductive Burial
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Solution Overview
Problem
Existing semiconductor devices, particularly those using oxide and organic semiconductors, are vulnerable to moisture intrusion, which affects the reliability of thin-film transistors (TFTs) and requires complex methods to prevent moisture ingress.
Innovation Solution
A method involving the formation of a gate electrode and wiring, covered by insulating films, with a connection hole and concave sections patterned in a single step using a multi-gradation mask to bury electrically-conductive films, thereby preventing moisture intrusion and enhancing TFT reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a side surface of a semiconductor film is covered with a source-drain electrode to prevent moisture intrusion, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent divides the protective structure into multiple functional zones: a connection hole region for electrical connection and concave sections for moisture protection. This segmentation allows each region to serve its specific function optimally while simplifying the overall manufacturing process through standardized patterning steps.
Solution Approach 2:
The patent forms the connection hole and concave sections in advance during the insulating film patterning step, before the electrically-conductive film is deposited. This preliminary action ensures that the moisture protection structure is already in place to guide subsequent material deposition and simplify the overall process flow.
2Reliability
If oxide semiconductor or organic semiconductor is used to achieve high mobility, then electron mobility is improved, but susceptibility to moisture intrusion increases
Solution Approach 1:
The patent applies different structural characteristics to different locations: the connection hole provides electrical connectivity where needed, while the concave sections provide enhanced moisture protection adjacent to the semiconductor film. This local differentiation addresses moisture sensitivity precisely where it affects device performance without compromising electrical function.
Solution Approach 2:
The electrically-conductive film serves as an intermediary element that simultaneously provides electrical connection through the connection hole and moisture protection by filling the concave sections. This single material performs dual functions, eliminating the need for separate protective layers.
Data Source
AI summary
A semiconductor device includes: a gate electrode and a wiring; a first insulating film covering the gate electrode and the wiring; a semiconductor film opposed to the gate electrode with the first insulating film in between; a first concave section located in a position adjacent to the semiconductor film; a connection hole, the connection hole being provided in the first insulating film, and the connection hole reaching the wiring, and a first electrically-conductive film, the first electrically-conductive film being electrically connected to the wiring through the connection hole, and the first electrically-conductive film being buried in the first concave section.