Semiconductor Resin Molding with Backflow to Protect Metal Wires
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Solution Overview
Problem
During the transfer molding process of semiconductor device manufacturing, deformation of metal wires due to resin flow reduces the reliability of the semiconductor device, as it can lead to electrical interference and reduced spatial distance between wires.
Innovation Solution
A method involving a mold with a first and second gate, where the resin is injected to fill a cavity and a sealing material storage part, and then flows back through the second gate, correcting the elongated shape of the metal wires and reducing unfilled parts, thereby enhancing the reliability of the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If resin is injected to fill the cavity during transfer molding, then the semiconductor chip is sealed and manufacturing is completed, but metal wires deform due to resin flow reducing reliability
Solution Approach 1:
The invention introduces a reservoir connected to the cavity through a gate, where excess resin is stored before the main filling operation. This preliminary reservoir absorbs the initial resin flow impact, preventing direct high-velocity resin injection into the cavity that causes metal wire deformation. The reservoir acts as a buffer that regulates resin flow into the cavity, allowing controlled filling that seals the semiconductor chip without deforming the metal wires.
2Productivity
If resin flows quickly to fill the cavity, then manufacturing efficiency increases, but metal wire deformation increases reducing spatial distance and causing electrical interference
Solution Approach 1:
The reservoir serves as an intermediary component between the injection system and the cavity. It mediates the resin flow by accepting excess resin first and then releasing it in a controlled manner into the cavity. This intermediary structure allows the filling process to maintain high productivity while ensuring that resin enters the cavity at controlled velocities, preventing metal wire deformation and maintaining precise wire positioning.
3Device complexity
If resin is injected from a single gate, then the process is simple, but air bubbles remain in gap parts creating unfilled parts
Solution Approach 1:
The invention segments the filling process by introducing a reservoir as an intermediate chamber between the injection system and the cavity. This segmentation allows resin to be injected into the reservoir first, where air bubbles can escape through designated paths, and then allows controlled filling of the cavity. The segmentation of the filling process into two stages (reservoir filling then cavity filling) eliminates air entrapment issues while maintaining relatively simple overall device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces deformation of metal wires, ensuring proper spacing and increasing the reliability of the semiconductor device by preventing electrical interference and achieving a high-quality resin package with improved heat radiation properties.
Implementation Method 1
making the sealing material filling the sealing material storage part flow back to the cavity via the second gate
Data Source
AI summary
Provided is a method of manufacturing a semiconductor device capable of increasing reliability. A method of manufacturing a semiconductor device includes steps of: filling a cavity and at least a part of a sealing material storage part with a sealing material by injecting the sealing material from a first gate of a mold, the mold including the cavity in which an electrical circuit is disposed, the first gate and a second gate provided to the cavity, and the sealing material storage part provided to an outer side of the cavity to be connected to the second gate; and making the sealing material filling the sealing material storage part flow back to the cavity via the second gate.