Semiconductor Device Integrating MOSFET and Control Circuit
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Solution Overview
Problem
Conventional semiconductor devices for power converters, such as non-insulated DC/DC converters, have a high number of components due to separate MOSFETs and control ICs, leading to increased size and cost.
Innovation Solution
A semiconductor device configuration where a first MOSFET and control circuit are integrated into a single semiconductor chip, and a second MOSFET with a different structure is integrated into a separate chip, both covered by a sealing resin, reducing the overall number of components by combining functions within a two-chip-in-one package.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If three separate semiconductor chips (two MOSFETs and one driver IC) are used, then each component can be optimized independently, but the number of components increases leading to larger device size and higher cost
Solution Approach 1:
The patent merges the driver IC and one MOSFET into a single semiconductor chip, reducing the total component count from three separate chips to two chips. This combining approach maintains the ability to optimize control functions while reducing device size and cost, directly resolving the contradiction between component optimization and device complexity
2Ease of manufacture
If three separate semiconductor chips are packaged together, then functional separation is achieved, but the overall device size and manufacturing cost increase
Solution Approach 1:
By integrating the driver IC and high-side MOSFET into one chip and the low-side MOSFET into another chip, the patent reduces the number of packaged components from three to two. This merging maintains functional separation through internal circuit design while significantly reducing the overall device volume and packaging complexity
Data Source
AI summary
A semiconductor device, includes: a first semiconductor chip including a first semiconductor substrate; and a second semiconductor chip including a second semiconductor substrate, wherein the first semiconductor substrate has a first substrate main surface and a first substrate back surface facing opposite directions in a first direction, and includes a first region and a second region disposed on the first substrate main surface, wherein the first semiconductor chip includes: a first MOSFET of a first type structure formed to include the first region; and a control circuit formed to include the second region, wherein the second semiconductor chip includes a second MOSFET of a second type structure formed to include the second semiconductor substrate, and wherein the second type structure is different from the first type structure.