Semiconductor Electrode Layout for Multi-Height Thick-Film Formation

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Solution Overview

Problem

Existing semiconductor elements face challenges in forming solder films with high dimensional accuracy and thick-film electrodes of different heights, as the manufacturing process is complex and requires repeated procedures.

Innovation Solution

A semiconductor element with a substrate having distinct regions and insulating film through-holes, allowing for the simultaneous formation of thick-film electrodes with varying heights through a reduced number of processes, where the second thick-film electrode is higher than the first and has a smaller through-hole area, improving manufacturing efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If solder films of different thicknesses are formed on electrodes at different heights, then the semiconductor element can be mounted on a flat substrate, but it becomes difficult to form the solder films with high dimensional accuracy and requires complex repeated processes

Engineering Contradiction:
Improvedimensional accuracy of solder filmsVSAvoidmanufacturing process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by forming thick-film electrodes of different heights before forming the solder films. The first thick-film electrode is formed to be higher than the second thick-film electrode in advance, so that when solder films are subsequently formed, the height difference is already established, enabling accurate thickness control of solder films on electrodes at different heights without requiring complex repeated processes

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent applies parameter changes by controlling the thickness of thick-film electrodes as a key parameter. By adjusting the thickness of the first and second thick-film electrodes to different values, the patent creates electrodes at different heights, which then allows solder films of different thicknesses to be formed accurately on each electrode type

Inventive Principle:
Principle #35Parameter changes

2Shape

If thick-film electrodes are formed separately to achieve different heights, then electrodes of different heights can be created, but the manufacturing process becomes complex requiring repeated procedures

Engineering Contradiction:
Improveheight difference of electrodesVSAvoidmanufacturing process steps
Core Design Contradiction:
ShapeVSDevice complexity

Solution Approach 1:

The patent applies merging by combining the formation of multiple thick-film electrodes with different heights into a single integrated process. Instead of separately forming each electrode type through repeated processes, the patent forms both the first and second thick-film electrodes in one manufacturing sequence, reducing process complexity while achieving the required height difference

Inventive Principle:
Principle #5Merging (Combining)

3Length of stationary object

If electrodes are thickened to change height instead of adjusting solder film thickness, then electrode height can be controlled, but manufacturing becomes difficult requiring repeated processes

Engineering Contradiction:
Improveelectrode heightVSAvoidmanufacturability of thick-film electrodes
Core Design Contradiction:
Length of stationary objectVSEase of manufacture

Solution Approach 1:

The patent applies local quality by creating different thicknesses of thick-film electrodes at different locations. The first thick-film electrode is formed with a greater thickness than the second thick-film electrode, allowing each electrode to have the specific height required for its function while being formed through a unified manufacturing process rather than repeated separate processes

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20240250215A1Semiconductor element and production method therefor
Publication Date: 2024.07.25 TDK CORP
  • US20240250215A1 patent drawing
  • US20240250215A1 patent drawing
  • US20240250215A1 patent drawing

AI summary

In the semiconductor element, a second electrode is higher than a first electrode, and the first electrode and the second electrode have substantially the same height positions of the upper surfaces. In the semiconductor element, since the first electrode and the second electrode can be formed at the same time, it is possible to form the semiconductor element including the first electrode and the second electrode by a small number of processes.