Semiconductor Heat Dissipation via Multi-Layer Conductor Stacking
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Solution Overview
Problem
Current semiconductor devices face challenges in effectively dissipating heat, particularly in power amplifiers used in wireless communication devices, which limits their output power and size efficiency.
Innovation Solution
A semiconductor device design featuring a substrate with transistors, operation electrodes, and alternating layers of interlayer insulating films and conductor films, where specific openings in the insulating films enhance heat conduction from the operation electrode to the conductor films, allowing for efficient heat dissipation through a structured heat transfer path.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the power output of a power amplifier is improved, then the output power increases, but heat dissipation becomes insufficient
Solution Approach 1:
The patent extends the heat transfer path from a single-layer structure to a multi-layer stacked configuration with conductor films at different heights. The openings in interlayer insulating films are positioned at different vertical levels, creating a three-dimensional heat conduction pathway that increases the effective heat dissipation area and efficiency without increasing the horizontal footprint of the device.
Solution Approach 2:
The heat transfer path is divided into multiple segments through the stacked conductor films (first layer conductor film, second layer conductor film, etc.) separated by interlayer insulating films. Each conductor film acts as an independent heat conduction segment, and the cumulative effect of multiple segments provides enhanced heat dissipation capability compared to a single continuous path.
2Temperature
If the heat transfer path is extended vertically through multiple layers, then heat dissipation improves, but the device height increases
Solution Approach 1:
The patent uses thin interlayer insulating films to separate conductor films vertically, allowing the heat transfer path to extend in the height direction while maintaining a compact overall structure. The thin film approach enables vertical stacking without proportionally increasing device height, as each layer occupies minimal vertical space.
3Temperature
If the opening in the second layer interlayer insulating film is positioned further from the first layer opening, then heat conduction efficiency improves, but the lateral space requirement increases
Solution Approach 1:
The patent resolves the space conflict by utilizing the vertical dimension. Instead of increasing lateral distance between openings in the same layer, the design positions openings at different vertical levels (first layer and second layer interlayer insulating films). This allows the heat transfer path to extend vertically rather than laterally, improving heat conduction efficiency while maintaining a compact lateral footprint.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design significantly improves heat dissipation from the transistors, enabling higher output power and smaller device sizes by efficiently conducting heat from the operation region to the module substrate via the emitter electrode, emitter wiring, and bump, thus addressing the limitations of existing technologies.
Implementation Method 1
Heat is conducted from the operation electrode to the second layer conductor film via the first layer conductor film. Heat can be allowed to be efficiently conducted from the operation electrode to the second layer conductor film via the first layer conductor film by disposing the opening in the first layer interlayer insulating film and the opening in the second layer interlayer insulating film in the above described manner.
Data Source
AI summary
A first layer conductor film is connected to an operation electrode through an opening in a first layer interlayer insulating film. An opening in a second layer interlayer insulating film is encompassed by the first layer conductor film in plan view. A second layer conductor film is connected to the first layer conductor film through the opening in a second layer interlayer insulating film. The average, along a first direction, of distances in a second direction, which is perpendicular to the first direction, from the opening in the first layer interlayer insulating film to the side surface of the opening in the second layer interlayer insulating film is greater than or equal to a distance in a height direction from an upper opening plane of the opening in the first layer interlayer insulating film to a lower opening plane of the opening in the second layer interlayer insulating film.