Radiation-Emitting Semiconductor Body With Multi-Wavelength Emitter Regions
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for producing radiation-emitting semiconductor bodies are complex and lack efficiency in generating electromagnetic radiation of different wavelength ranges, particularly in creating multiple emitter regions with distinct emission spectra.
Innovation Solution
A method involving a growth substrate with distributor structures that vary the epitaxial growth of compound semiconductor materials, allowing for the creation of multiple emitter regions with different chemical compositions and thicknesses, enabling the generation of electromagnetic radiation of various wavelengths by controlling the precursor material distribution and epitaxial deposition processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple emitter regions with different wavelength ranges are produced using conventional methods, then the radiation-emitting semiconductor body can generate electromagnetic radiation of different wavelengths, but the production process becomes complex and inefficient
Solution Approach 1:
The growth substrate surface is divided into multiple emitter regions with different chemical compositions and thicknesses, where each region is defined by distributor structures that control precursor material distribution. This segmentation allows simultaneous production of multiple wavelength-emitting regions in a single epitaxial growth process, avoiding complex multi-step manufacturing while achieving spectral versatility.
Solution Approach 2:
Different regions of the semiconductor layer sequence are given different local properties through controlled variation in chemical composition and thickness. The distributor structures create spatially varying precursor material distribution, resulting in emitter regions with tailored optical properties for different wavelength ranges, all within a unified production process.
2Ease of manufacture
If the epitaxial growth is made homogeneous across the growth substrate, then the production process is simplified, but multiple emitter regions with distinct emission spectra cannot be created
Solution Approach 1:
The chemical composition and thickness parameters of the semiconductor layers are varied spatially across the growth substrate during epitaxial growth. Distributor structures modulate the precursor material distribution, creating controlled gradients in indium content and layer thickness that define different emitter regions with distinct emission spectra, all within a single continuous growth process.
3Adaptability or versatility
If distributor structures are introduced to vary epitaxial growth, then multiple emitter regions with different properties are created, but the production process complexity increases
Solution Approach 1:
Distributor structures serve as intermediary elements that mediate between the homogeneous epitaxial growth process and the desired heterogeneous emitter region properties. These structures control precursor material distribution and epitaxial growth rates, translating a simple single-step growth process into a method that produces spatially varied emitter regions with different optical characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the production of radiation-emitting semiconductor bodies, allowing for the efficient generation of electromagnetic radiation with distinct wavelength ranges, reducing operational complexity and enabling the creation of semiconductor laser chips and light-emitting diodes with improved performance.
Implementation Method 1
a compound semiconductor material is deposited epitaxially on the main face of the growth substrate, wherein the epitaxial growth of the compound semiconductor material varies along the main face because of the distributor structures
Data Source
AI summary
The invention relates to a method for producing a radiation-emitting semiconductor body, including the following steps: providing a growth substrate having a main surface; producing a plurality of distributor structures on the main surface of the growth substrate; epitaxially depositing a compound semiconductor material on the main surface of the growth substrate, wherein the epitaxial growth of the compound semiconductor material varies along the main surface because of the distributor structures, such that the epitaxial deposition produces an epitaxial semiconductor layer sequence having at least a first emitter region and a second emitter region on the main surface, the first emitter region and the second emitter region being laterally adjacent to each other in a top view of a main surface of the semiconductor body, and the first emitter region and the second emitter region producing electromagnetic radiation of different wavelength ranges during operation. The invention also relates to a radiation-emitting semiconductor body.