Semiconductor Multilayer Structure on Ge Substrate
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Solution Overview
Problem
Semiconductor multilayer structures with AlGaAs layers on GaAs substrates experience compressive strain buildup, leading to reduced device lifetimes and misfit dislocations, which hinder the integration of optoelectronic devices with microelectronic circuits, especially on Si substrates where AlGaAs materials cannot be grown with required quality.
Innovation Solution
A semiconductor device with a multilayer structure comprising layers of AlxGa1-xAs, AlxGa1-x-yInyAs, and other materials grown on a Ge substrate, which reduces compressive strain and allows for the integration of optoelectronic devices by maintaining a low lattice mismatch with the Ge layer, enabling operation at various wavelengths and integration with Si-based microelectronics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If AlGaAs layers are grown on GaAs substrates, then optoelectronic device functionality is achieved, but compressive strain buildup occurs leading to reduced device lifetime and misfit dislocations
Solution Approach 1:
The patent changes the substrate material parameter from GaAs to Ge, and adjusts the AlGaAs layer composition parameters (Al content x, thickness) to optimize the lattice mismatch and reduce compressive strain accumulation, thereby improving device reliability
Solution Approach 2:
The patent introduces a buffer layer or transition layer structure between the Ge substrate and AlGaAs layers to mediate the lattice mismatch and reduce strain buildup, preventing misfit dislocations
2Adaptability or versatility
If AlGaAs materials are grown on Si substrates, then integration with microelectronic circuits is enabled, but required material quality cannot be achieved
Solution Approach 1:
The patent uses Ge as an intermediary substrate layer between Si and AlGaAs materials, enabling integration with Si-based microelectronics while maintaining the required material quality for optoelectronic devices
Solution Approach 2:
The patent creates a composite multilayer structure combining Si, Ge, and AlGaAs materials, where each layer serves a specific function and the combination enables both integration capability and high material quality
3Reliability
If Ge substrate is used for AlGaAs growth, then compressive strain is reduced and device lifetime is increased, but lattice mismatch must be carefully controlled
Solution Approach 1:
The patent precisely controls the composition parameters (Al content x, In content y, P content z, N content c) and thickness parameters of each layer to optimize the lattice matching between Ge substrate and AlGaAs layers, reducing strain while maintaining device performance
Data Source
AI summary
A semiconductor device includes a substrate comprising a layer made of Ge and a semiconductor multilayer structure grown on the layer made of Ge. The semiconductor multilayer structure includes at least one first layer comprising a material selected from a group consisting of AlxGa1-xAs, AlxGa1-x-yInyAs, AlxGa1-x-yInyAs1-zPz, AlxGa1-x-yInyAs1-zNz, and AlxGa1-x-yInyAs1-z-cNzPc, AlxGa1-x-yInyAs1-z-cNzSbc, and AlxGa1-x-yInyAs1-z-cPzSbc, wherein for any material a sum of the contents of all group-III elements equals 1 and a sum of the contents of all group-V elements equals 1. The semiconductor multilayer structure also includes at least one second layer comprising a material selected from a group consisting of GaInAsNSb, GaInAsN, AlGaInAsNSb, AlGaInAsN, GaAs, GaInAs, GaInAsSb, GaInNSb, GaInP, GaInPNSb, GaInPSb, GaInPN, AlInP, AlInPNSb, AlInPN, AlInPSb, AlGaInP, AlGaInPNSb, AlGaInPN, AlGaInPSb, GaInAsP, GaInAsPNSb, GaInAsPN, GaInAsPSb, GaAsP, GaAsPNSb, GaAsPN, GaAsPSb, AlGaInAs and AlGaAs.