Semiconductor Logic Circuit Using N-Channel Transistors and Capacitor

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Solution Overview

Problem

The fabrication of p-channel oxide semiconductor transistors is difficult, leading to increased costs and reduced productivity when both p-channel and n-channel transistors are fabricated on the same substrate, resulting in a logic circuit with reduced output voltage due to transistors of the same conductivity type.

Innovation Solution

A semiconductor device is designed with a configuration that includes multiple n-channel transistors and a capacitor, where the channel length of one transistor is shorter and the channel width is longer than another, allowing for high productivity and low power consumption, and utilizing oxide semiconductors with back gates to enhance mobility and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If both p-channel and n-channel transistors are fabricated separately on one substrate, then logic circuits with both conductivity types can be constructed, but the number of process steps increases and productivity decreases

Engineering Contradiction:
Improvelogic circuit functionalityVSAvoidfabrication productivity
Core Design Contradiction:
Adaptability or versatilityVSProductivity

Solution Approach 1:

The invention inverts the conventional approach by fabricating only n-channel transistors on the substrate, rather than attempting to fabricate both p-channel and n-channel transistors. This inversion simplifies the fabrication process while the capacitor circuit configuration compensates for the missing p-channel functionality, thereby improving productivity without sacrificing logic circuit versatility

Inventive Principle:
Principle #13The other way round (Inversion)

2Adaptability or versatility

If both p-channel and n-channel transistors are fabricated on the same substrate, then logic circuits with both conductivity types can be constructed, but fabrication cost increases

Engineering Contradiction:
Improvelogic circuit functionalityVSAvoidfabrication cost
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The invention inverts the conventional approach by fabricating only n-channel transistors on the substrate, rather than attempting to fabricate both p-channel and n-channel transistors. This inversion simplifies the fabrication process while the capacitor circuit configuration compensates for the missing p-channel functionality, thereby improving productivity without sacrificing logic circuit versatility

Inventive Principle:
Principle #13The other way round (Inversion)

3Productivity

If transistors with the same conductivity type are used to construct logic circuits, then productivity is improved, but output voltage drops due to threshold voltage losses

Engineering Contradiction:
Improvefabrication productivityVSAvoidoutput voltage
Core Design Contradiction:
ProductivityVSPower

Solution Approach 1:

The invention changes the circuit configuration parameters by introducing a specific capacitor connection between the gate and drain of the n-channel transistor. This parameter change allows the circuit to compensate for threshold voltage losses and achieve full swing output voltage, thereby maintaining high productivity while resolving the output voltage degradation issue

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS9899424B2Semiconductor device and electronic device
Publication Date: 2018.02.20 SEMICON ENERGY LAB CO LTD
  • US9899424B2 patent drawing
  • US9899424B2 patent drawing
  • US9899424B2 patent drawing

AI summary

Decrease of the output voltage of the logic circuit is inhibited by raising the gate voltage using a capacitor. In a first transistor, a drain and a gate are electrically connected to a first wiring, and a source is electrically connected to a first node. In a second transistor, a drain is electrically connected to the first node, a source is electrically connected to a second wiring, and a gate is electrically connected to a second node. In a third transistor, a drain is electrically connected to a third wiring, and a source is electrically connected to a third node, and a gate is electrically connected to the first node. In a fourth transistor, a drain is electrically connected to the third node, a source is electrically connected to a fourth wiring, and a gate is electrically connected to the second node. In a capacitor, one electrode is electrically connected to the first node, and the other electrode is electrically connected to the third node. OS transistors are preferably used as the transistors above.