Semiconductor N-type Well Region Breakdown Voltage
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving satisfactory breakdown voltage as device scaling-down continues, particularly in manufacturing processes that require multiple implant masks, leading to increased costs and non-uniform electric field distribution.
Innovation Solution
A method for forming a semiconductor device with a N-type well region having a low-concentration doping portion between high-concentration doping portions, achieved by using a single implant mask for ion implantation, which increases breakdown voltage without additional implant masks and reduces manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple implant masks are used to form the N-type well region, then the doping concentration distribution can be controlled, but the manufacturing cost increases and the process complexity increases
Solution Approach 1:
The N-type well region is divided into three distinct doping concentration portions (first, second, and third portions with different doping concentrations) within a single well structure. This segmentation of doping concentrations within one region achieves precise electric field control without requiring multiple separate implant masks, thereby resolving the contradiction between manufacturing precision and process complexity
Solution Approach 2:
Different portions of the N-type well region are assigned different doping concentrations locally - the first and second portions have higher doping concentrations while the third portion has lower doping concentration. This local quality variation optimizes the electric field distribution at different locations, achieving precise control without increasing overall process complexity
2Manufacturing precision
If multiple implant masks are used to form the N-type well region, then the doping concentration distribution can be controlled, but the manufacturing cost increases
Solution Approach 1:
Multiple doping concentration regions (first, second, and third portions with different doping concentrations) are merged into a single N-type well region that can be formed using one implant mask process. This merging achieves the doping concentration distribution control typically requiring multiple masks while reducing manufacturing cost by eliminating additional mask steps
3Device complexity
If conventional doping structures are used, then the manufacturing process is simpler, but the breakdown voltage is insufficient
Solution Approach 1:
The doping concentration parameter is varied across different portions of the N-type well region - the first and second portions use higher doping concentrations while the third portion uses lower doping concentration. This parameter change creates an optimized electric field distribution that increases breakdown voltage while maintaining manufacturing process simplicity through a single implant mask approach
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances breakdown voltage and improves semiconductor device performance by maintaining high-concentration doping regions while reducing manufacturing costs through the use of a single implant mask for forming the N-type well region.
Implementation Method 1
performing a heat treatment process on the semiconductor substrate to form an N-type well region and a P-type well region in the semiconductor substrate
Implementation Method 2
forming a first N-type implant region and a second N-type implant region in the semiconductor substrate
Data Source
AI summary
A method includes providing a semiconductor substrate, and forming a first N-type implant region and a second N-type implant region in the semiconductor substrate. The first N-type implant region and the second N-type implant region are separated by a portion of the semiconductor substrate. The method also includes forming a first P-type implant region in the semiconductor substrate, and performing a heat treatment process on the semiconductor substrate to form an N-type well region and a P-type well region in the semiconductor substrate. The N-type well region has a first portion, a second portion, and a third portion between the first portion and the second portion. The doping concentration of the third portion is lower than the doping concentration of the first portion and the doping concentration of the second portion.