Semiconductor Nanopore Device Circuit Integration
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Solution Overview
Problem
Nanopore sequencing devices face challenges in accurately characterizing biomolecules due to noise and distortion introduced by long electrode wires, and the complexity and cost of traditional nanopore formation methods, which affect the precision and reliability of biomolecule detection.
Innovation Solution
A semiconductor-based nanopore device is integrated with a sensing circuitry formed directly on the chip, minimizing noise by converting analog signals to digital form locally and allowing in situ formation of nanopores using graphene or MoS2 transistors, reducing the need for e-beam ion milling and enabling precise placement of nanopores.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If traditional nanopore devices use long electrode wires to connect sensing circuits, then the device can be manufactured with simpler circuit integration, but noise and distortion increase reducing measurement precision
Solution Approach 1:
The patent merges the sensing circuitry with the nanopore device by integrating transistors directly onto the nanopore membrane substrate. This consolidation eliminates long electrode wires by placing the sensing elements in immediate proximity to the measurement site, thereby reducing noise and distortion while maintaining manufacturing feasibility through co-integration processes.
Solution Approach 2:
The patent introduces a substrate as an intermediary platform that supports both the nanopore structure and the integrated transistor circuitry. This substrate acts as a mediator that enables direct electrical connection between the nanopore and sensing circuits without requiring long external wires, thus reducing signal degradation while simplifying the overall device architecture.
2Manufacturing precision
If e-beam ion milling is used for nanopore formation, then precise nanopore placement can be achieved, but the process complexity and manufacturing cost increase
Solution Approach 1:
The patent replaces the mechanical e-beam ion milling process with a chemical etching method using buffered oxide etch (BOE). This substitution maintains the ability to achieve precise nanopore placement through photolithographic patterning while dramatically simplifying the fabrication process by eliminating the need for complex e-beam equipment and associated process steps.
Solution Approach 2:
The patent changes the nanopore formation mechanism from physical sputtering (e-beam ion milling) to chemical dissolution (BOE etching). This parameter change in the formation process maintains control over nanopore dimensions and placement through standard photolithography while reducing overall process complexity and manufacturing cost.
Data Source
AI summary
A semiconductor device includes a circuit layer and a nanopore layer. The nanopore layer is formed on the circuit layer and is formed with a pore therethrough. The circuit layer includes a circuit unit configured to drive a biomolecule through the pore and to detect a current associated with a resistance of the nanopore layer, whereby a characteristic of the biomolecule can be determined using the currents detected by the circuit unit.