Semiconductor Device Negative Charge Generation Layer Drain Breakdown
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Solution Overview
Problem
Related-art high-electron-mobility transistors (HEMTs) face difficulties in improving drain breakdown voltage due to high electron concentration near the gate electrode, which leads to high electric field concentration and tunneling current, making it challenging to enhance drain breakdown voltage even with increased distance between the gate and drain electrodes.
Innovation Solution
Incorporating a negative charge generation layer on the capping layer between the gate and drain electrodes, which is negatively charged, reduces electron concentration and electric field intensity, thereby improving drain breakdown voltage. This layer is composed of materials with excess anionic elements or high electron affinity, such as silicon nitride or aluminum oxide, to effectively decrease the density of two-dimensional electron gas near the gate electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the distance between the gate electrode and the drain electrode is increased, then the drain breakdown voltage increases, but the device area increases and power density decreases
Solution Approach 1:
A negative charge generation layer is introduced as an intermediary between the gate electrode and drain electrode. This layer generates negative charges that reduce the electric field intensity in the drift region, thereby suppressing tunneling current and improving drain breakdown voltage without requiring increased spacing between electrodes.
Solution Approach 2:
The electric field distribution parameters are changed by introducing the negative charge generation layer. The layer modifies the electric field intensity and electron concentration parameters in the drift region, enabling improved breakdown voltage with compact device dimensions.
2Productivity
If the distance between the gate electrode and the source electrode is decreased, then the source resistance decreases and power density increases, but the electron concentration near the gate increases leading to higher tunneling current
Solution Approach 1:
The negative charge generation layer acts as a mediator between the gate electrode and the drift region. It suppresses the harmful tunneling current effect that would otherwise occur when the gate-source distance is reduced for higher power density.
3Reliability
If the electron concentration near the gate electrode is increased, then the conductivity increases, but the electric field concentration increases leading to higher tunneling current and reduced drain breakdown voltage
Solution Approach 1:
The negative charge generation layer converts the harmful effect of high electron concentration and electric field concentration into a benefit. By generating negative charges, it reduces the net electric field intensity and suppresses tunneling current, turning the high electron concentration region into a controlled environment that maintains conductivity while reducing breakdown voltage issues.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The application of a negative charge generation layer significantly reduces the electron concentration and electric field intensity, leading to improved drain breakdown voltage and reduced gate current, enabling higher power density and efficiency in semiconductor devices.
Implementation Method 1
a negative charge generation layer disposed on the first capping layer, the negative charge generation layer being configured to generate a negative charge
Data Source
AI summary
A disclosed semiconductor device includes an electron transit layer; an electron supply layer disposed above the electron transit layer; a source electrode, a drain electrode, and a gate electrode, the source electrode, the drain electrode, and the gate electrode being disposed on the electron supply layer; a first capping layer disposed on the electron supply layer between the gate electrode and the drain electrode; and a negative charge generation layer disposed on the first capping layer, the negative charge generation layer being configured to generate a negative charge.