Semiconductor Device With Nested Wells For Adjustable Saturation Current
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Solution Overview
Problem
High-voltage semiconductor devices face challenges in providing adjustable and wide saturation current without increasing size or altering process conditions, limiting design flexibility and energy efficiency.
Innovation Solution
A semiconductor device structure with a substrate, multiple doped regions, and wells is designed, allowing for adjustable saturation current and pinch-off voltage by varying doping concentration and well width, without changing processes or adding masks, enabling flexible circuit design and reduced energy consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high-voltage junction field-effect transistor is used to withstand several hundred volts, then the breakdown voltage is improved, but the device size increases, limiting design flexibility
Solution Approach 1:
The device is segmented into multiple doped regions (first doped region, second doped region, third doped region, fourth doped region) and nested wells (first well, second well) that divide the voltage blocking function across multiple structural elements, allowing high breakdown voltage without proportionally increasing overall device area
Solution Approach 2:
The patent implements a nested structure where the second well is located within the first well, and multiple doped regions are positioned within and around these wells. This nesting allows multiple functional regions to occupy overlapping spatial volumes, achieving high voltage capability without linear area increase
2Adaptability or versatility
If the size of the high-voltage junction field-effect transistor is increased to provide adjustable saturation current, then the saturation current range is improved, but the device area increases, which is not acceptable
Solution Approach 1:
The patent applies local quality by creating regions with different doping concentrations (first doped region, second doped region, third doped region, fourth doped region) within the device structure. These locally varied doping profiles enable adjustment of saturation current through controlled carrier distribution without requiring overall device size increase
Solution Approach 2:
The patent utilizes parameter changes by varying doping concentrations in different regions and adjusting well dimensions (first well, second well) to modulate the electrical characteristics. This allows continuous adjustment of saturation current and pinch-off voltage through parameter optimization rather than geometric scaling
3Ease of operation
If additional masks or process changes are made to adjust pinch-off voltage, then the pinch-off voltage control is improved, but the manufacturing complexity increases
Solution Approach 1:
The patent achieves multi-functionality where the same doped regions and wells serve multiple purposes: the first and second doped regions simultaneously form part of the voltage blocking structure and the saturation current control mechanism, while the wells provide both mechanical structure and electrical field control. This eliminates the need for separate process steps for different functions
Solution Approach 2:
The patent merges the voltage blocking function, saturation current control, and pinch-off voltage adjustment into a single integrated structure. The multiple doped regions and nested wells work together as a unified system where all electrical characteristics are controlled through the same manufacturing process, avoiding additional masks or process complexity
Data Source
AI summary
Provided is a semiconductor device including a substrate having a first conductivity type, a first well having a second conductivity type, a first doped region having the first conductivity type, a second well having the second conductivity type, at least one second doped region having the first conductivity type, at least one third doped region having the second conductivity type, and a fourth doped region having the second conductivity type. The first well is located in the substrate. The first doped region is located in the first well. The second well is located in the first well. The second doped region is located in the first doped region. The third doped region is located in the first well at a first side of the first doped region. The fourth doped region is located in the first well at a second side of the first doped region.