Semiconductor Neutron Detection With Boron-10 Alpha-Ray Selection
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Solution Overview
Problem
Semiconductor-based neutron detection elements exhibit output variation due to α-rays and Li-particle beams emitted in opposite directions, leading to inconsistent detection results.
Innovation Solution
A neutron detection element with a semiconductor layer and a neutron conversion layer containing boron 10 or lithium 6, which converts neutrons into α-rays and filters out Li-particle beams, using a configuration that only allows α-rays to generate electron-hole pairs for detection, with an amplifier to measure the output.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If both α-rays and Li-particle beams are detected in the depletion layer, then neutron detection capability is achieved, but output variation increases due to different charge generation amounts
Solution Approach 1:
The patent extracts only the α-ray detection function from the neutron conversion process by placing the 10B layer adjacent to the depletion layer, while Li-particle beams are emitted away from the depletion layer and not detected, thus eliminating output variation caused by detecting both particle types
Solution Approach 2:
The patent creates a localized detection region by positioning the 10B-containing layer specifically adjacent to one side of the depletion layer, ensuring that only α-rays generated in this local region are detected, while Li-particle beams emitted in opposite directions are excluded from detection
2Reliability
If a semiconductor-based neutron detection element is used, then neutron detection is achieved, but output variation occurs due to opposite direction emission of charged particles
Solution Approach 1:
The patent introduces asymmetry in the detection geometry by placing the 10B layer adjacent to only one side of the depletion layer, creating an asymmetric configuration where α-rays are detected but Li-particle beams emitted in the opposite direction are not detected, thus achieving consistent output
Data Source
AI summary
A neutron detection element 100 includes: a neutron detector configured to detect a neutron and convert the neutron into an electrical signal; and an amplifier configured to amplify an output of the neutron detector. The neutron detector includes: a semiconductor layer of a first conductivity type; a detector diffusion layer of a second conductivity type in the semiconductor layer; and a neutron conversion layer on the detector diffusion layer. The neutron conversion layer converts a neutron into an α-ray. The amplifier includes a plurality of transistors in the semiconductor layer. The neutron conversion layer is a metal film including a layer containing boron 10 or a layer containing lithium 6.