Semiconductor Neutron Sensor with Scintillating Layer
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Solution Overview
Problem
Current neutron detection systems, such as those using pressurized 3He tubes, are costly, difficult to manufacture due to rare helium-3 availability, and inefficient, necessitating the development of alternative sensor systems for reliable detection of hazardous radiation.
Innovation Solution
A semiconductor sensor device comprising a photosensor with a scintillating layer and transistors, where the scintillating layer emits secondary elements upon exposure to primary radiation, such as neutrons, allowing for detection through a photoreactor and transistors configured to amplify and read the resulting signals, enabling flexible and efficient radiation detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If pressurized 3He tubes are used for neutron detection, then detection reliability is improved, but manufacturing cost increases and material availability decreases
Solution Approach 1:
The patent replaces expensive, rare 3He tubes with inexpensive, commercially available semiconductor components including photodetectors, scintillating materials, and standard electronic circuits. These components can be mass-produced using standard semiconductor fabrication processes, eliminating reliance on rare helium-3 gas and manual assembly procedures.
Solution Approach 2:
The invention changes the fundamental detection parameters by transitioning from gas-filled tube detection to solid-state semiconductor detection. This involves converting the detection mechanism from ionization in gas to charge carrier generation in semiconductor materials, enabling compatibility with modern integrated circuit manufacturing techniques and dramatically reducing production costs.
2Reliability
If pressurized 3He tubes are used for neutron detection, then detection reliability is improved, but device complexity increases
Solution Approach 1:
The patent merges the neutron detection function with standard semiconductor photodetector technology and electronic readout circuits. By integrating the scintillating layer directly onto the photodetector substrate and combining signal processing functions within the same device package, the system achieves simplified architecture compared to separate 3He tube assemblies with external electronics.
Solution Approach 2:
The semiconductor-based detector can detect multiple types of radiation including neutrons, gamma rays, and other ionizing radiation using the same basic device structure. The photodetector array can be configured for various detection modes and applications, providing multi-functionality that reduces overall system complexity compared to specialized 3He tube systems.
3Measurement precision
If scintillating layer is coupled to photosensor, then detection sensitivity is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent segments the detection system into distinct functional layers including the scintillating layer, photodetector array, and readout electronics, which can be fabricated separately and then assembled. This modular approach allows each component to be optimized and tested independently, reducing the overall manufacturing precision requirements compared to monolithic integrated designs.
Solution Approach 2:
The scintillating layer is implemented as a thin film that can be deposited onto the photodetector substrate using standard thin-film deposition techniques. This flexible thin-film approach accommodates minor substrate variations and alignment tolerances, reducing the stringency of manufacturing precision requirements while maintaining effective coupling between the scintillating material and photodetector elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a cost-effective and efficient method for detecting radiation, including neutrons, by utilizing a flexible substrate and thin-film transistors, reducing reliance on rare materials and improving detection sensitivity and accuracy.
Implementation Method 1
a scintillating layer coupled to the photosensor. The photosensor can include a photoreactor configured to react upon exposure to a secondary element;
Data Source
AI summary
Embodiments of sensor systems and related methods of operating and manufacturing the same are described herein. The sensor systems can be used to detect atomic or subatomic particles or radiation. Other embodiments and related methods are also disclosed herein.