Semiconductor Apparatus Nitrogen Gradient Adhesion
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Solution Overview
Problem
The existing semiconductor apparatuses face challenges with exfoliation between conductor layers and insulator layers, particularly due to the diffusion of copper, which affects the reliability and performance of the devices.
Innovation Solution
The semiconductor apparatus incorporates a configuration with multiple conductor and insulator layers, where the distance between the conductor and insulator portions is carefully managed, and intermediate regions with varying nitrogen concentrations are introduced to enhance adhesion and reduce exfoliation, utilizing silicon and copper bonding to improve the interface between the layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulator layer is provided to cover the conductor layer to prevent copper diffusion, then copper diffusion is prevented, but exfoliation occurs between the conductor layer and the anti-diffusion film
Solution Approach 1:
An intermediate layer containing silicon and copper is introduced between the conductor layer and the insulator layer. This intermediate layer acts as a mediator that improves adhesion between the conductor layer and the insulator layer, preventing exfoliation while maintaining copper diffusion prevention. The intermediate layer has a maximum nitrogen concentration that is optimized to balance adhesion and electrical properties.
Solution Approach 2:
The nitrogen concentration in the intermediate layer is varied locally, with a maximum nitrogen concentration that is higher than in conventional structures. This local quality change enhances the adhesion between layers in critical regions while maintaining overall electrical performance. The distance between the conductor portion and insulator portion is controlled to be smaller than the conductor layer thickness, creating localized regions of enhanced adhesion.
2Strength
If the distance between conductor portion and insulator portion is reduced to improve adhesion, then adhesion is enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The distance between the conductor portion and insulator portion is controlled to be smaller than the thickness of the conductor layer, but not excessively small. This parameter optimization balances adhesion enhancement with manufacturability. The intermediate layer's nitrogen concentration is also optimized to achieve strong adhesion without requiring extreme dimensional precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces exfoliation between conductor and insulator layers, enhancing the reliability and performance of the semiconductor apparatus by optimizing the nitrogen concentration in intermediate regions to balance adhesion and connection resistances.
Implementation Method 1
a first region containing silicon and copper is disposed between the first conductor portion and the first insulator portion... a second region containing silicon and copper is disposed between the second conductor portion and the second insulator portion
Data Source
AI summary
A semiconductor apparatus configured to decrease occurrence of exfoliation between a conductor layer and an insulator layer is provided. A first region containing silicon and copper is disposed between a first conductor portion and a first insulator portion. A second region containing silicon and copper is disposed between a second conductor portion and a second insulator portion. The first region has a maximum nitrogen concentration higher than that of the second region.