Semiconductor Layer Structure With Nitrogen-Rich Interfaces
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving favorable electrical characteristics, reliable operation, high on-state current, excellent frequency characteristics, miniaturization, high productivity, long data retention, high-speed data writing, reduced power consumption, and design flexibility.
Innovation Solution
A semiconductor device structure incorporating specific layers of oxides, conductors, and insulators with nitrogen-enriched regions, along with a manufacturing method involving microwave treatment in a nitrogen atmosphere, is used to enhance electrical performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor manufacturing methods are used, then manufacturing simplicity is maintained, but electrical characteristics and reliability are insufficient
Solution Approach 1:
The patent applies local quality by creating nitrogen-enriched regions at specific interfaces (insulator-conductor and insulator-oxide boundaries) rather than uniformly distributing nitrogen throughout the structure. This localized nitrogen concentration enhancement at critical interfaces improves electrical characteristics and reliability without requiring complex modifications to the entire device structure.
Solution Approach 2:
The patent utilizes parameter changes by controlling nitrogen concentration distribution through microwave treatment in a nitrogen atmosphere. By adjusting treatment conditions (power, time, atmosphere composition), the nitrogen concentration at specific interfaces is optimized to achieve desired electrical characteristics while maintaining structural simplicity.
2Area of moving object
If device size is reduced for miniaturization, then integration density improves, but maintaining electrical performance becomes difficult
Solution Approach 1:
The patent maintains electrical performance in miniaturized devices by concentrating nitrogen enrichment at critical interfaces rather than requiring uniform material composition throughout the entire device. This localized approach ensures that key electrical characteristics are preserved even as overall device dimensions are reduced for higher integration density.
3Loss of energy
If power consumption is reduced, then energy efficiency improves, but on-state current may be insufficient
Solution Approach 1:
The patent optimizes the balance between power consumption and on-state current by controlling nitrogen concentration at interfaces. The nitrogen enrichment modifies carrier transport properties to reduce leakage current (lowering power consumption) while maintaining or enhancing on-state current through improved interface quality and reduced scattering, achieving both energy efficiency and sufficient drive current.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves improved electrical characteristics, reliable operation, high on-state current, excellent frequency performance, miniaturization, long data retention, high-speed data writing, reduced power consumption, and increased design flexibility.
Implementation Method 1
performing microwave treatment in a nitrogen atmosphere
Implementation Method 2
the third insulator includes, in the vicinity of an interface with the fourth conductor and in the vicinity of an interface with the fifth conductor, a region having a higher nitrogen concentration than a different region of the third insulator
Data Source
AI summary
A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator over the first insulator and the second insulator; a second oxide positioned over the first oxide and between the first conductor and the second conductor; a fourth insulator over the second oxide; a third conductor over the fourth insulator; a fifth insulator in contact with a top surface of the third insulator, a top surface of the second oxide, a top surface of the fourth insulator, and a top surface of the third conductor; a fourth conductor embedded in an opening formed in the first insulator, the third insulator, and the fifth insulator and in contact with the first conductor; and a fifth conductor embedded in an opening formed in the second insulator, the third insulator, and the fifth insulator and in contact with the second conductor. The third insulator includes, in the vicinity of an interface with the fourth conductor and in the vicinity of an interface with the fifth conductor, a region having a higher nitrogen concentration than a different region of the third insulator.