Semiconductor Apparatus Resolving N-Channel MOS Voltage Drop
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Solution Overview
Problem
N channel MOS transistors are limited in transferring higher voltages without voltage drop, making them unsuitable for switching devices in voltage or current-sensitive applications, as they require a higher voltage input or back-bias adjustment to operate effectively.
Innovation Solution
A semiconductor apparatus with a variable resistor unit, a switch driving unit, and a power supply unit that generates and applies a first voltage to raise the voltage level of resistor selection signals, compensating for the threshold voltage loss in switch transistors, allowing for efficient voltage transfer to variable resistors without voltage drop.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If N channel MOS transistors are used as switching devices to transfer voltage, then the device can be simplified and manufactured easily, but voltage drop occurs and higher voltages cannot be transferred effectively
Solution Approach 1:
The patent introduces a P channel MOS transistor as an intermediary device between the N channel MOS transistor and the variable resistor. The P channel MOS transistor compensates for the voltage drop in the N channel MOS transistor by providing a back-bias voltage, thereby enabling accurate voltage transfer without requiring the N channel MOS transistor to directly handle high voltages. This intermediary approach resolves the contradiction by maintaining the ease of manufacture of N channel MOS transistors while achieving reliable voltage transfer accuracy through the cooperative action of the P channel MOS transistor.
2Reliability
If the gate voltage of N channel MOS transistor is raised to transfer higher voltages, then voltage transfer capability is improved, but the device complexity increases due to additional voltage control circuits
Solution Approach 1:
The patent merges the voltage compensation function into the existing transistor structure by adding a P channel MOS transistor that operates in conjunction with the N channel MOS transistor. Instead of requiring separate voltage control circuits to raise the gate voltage, the P channel MOS transistor integrates the compensation function directly into the switching path, thereby improving voltage transfer capability while avoiding the complexity of additional external control circuits.
3Reliability
If back-bias voltage is changed to improve N channel MOS transistor performance, then voltage transfer accuracy is improved, but the device complexity increases due to additional bias control mechanisms
Solution Approach 1:
The P channel MOS transistor provides self-service voltage compensation by automatically adjusting its own voltage based on the circuit conditions. The back-bias voltage generated by the P channel MOS transistor is inherently tied to the gate voltage of the N channel MOS transistor, eliminating the need for external bias control mechanisms. This self-service approach improves voltage transfer accuracy while avoiding the complexity of additional bias control circuits.
Data Source
AI summary
A semiconductor apparatus includes a variable resistor, a variable resistor selection unit configured to electrically couple the variable resistor to a sense amplifier in response to a resistor selection signal, a power supply unit configured to apply a first voltage to the variable resistor selection unit in response to a read signal, and a switch driving unit configured to generate the resistor selection signal in response to a resistor selection control signal, and to raise a voltage of the resistor selection signal when the first voltage is applied to the variable resistor selection unit.