Semiconductor Die Noise Absorbing Regions Between THVs
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Solution Overview
Problem
Semiconductor devices in high-frequency applications, such as RF wireless communications, face issues with electromagnetic interference (EMI) and radio frequency interference (RFI) due to the lack of adequate isolation in organic materials used for through hole vias, leading to signal integrity reduction and operational hindrances.
Innovation Solution
The implementation of a semiconductor device with a conductive through hole via (THV) surrounded by a noise absorbing material or shielding region to isolate the die from intra-device interference, using insulating materials and conductive layers to connect contact pads and provide effective EMI/RFI shielding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If organic materials are used for through hole vias, then ease of manufacture is improved, but electromagnetic interference and radio frequency interference increase
Solution Approach 1:
The patent applies composite materials by combining organic insulating material with conductive shielding material to form a through hole via structure. The organic material provides electrical insulation and ease of manufacture, while the conductive shielding material (such as metal layer or mesh) provides electromagnetic interference and radio frequency interference protection. This composite structure resolves the contradiction by integrating both manufacturing ease and EMI/RFI shielding capabilities in a single via construction.
2Reliability
If conductive through hole vias are used, then electrical interconnection is improved, but intra-device interference increases
Solution Approach 1:
The patent introduces an intermediary shielding structure within the through hole via. The conductive shielding material (such as a metal layer or mesh) acts as an intermediary between adjacent conductive vias, blocking electromagnetic fields and preventing direct interference between signals carried by different vias. This intermediary shielding layer maintains the electrical interconnection function while simultaneously reducing intra-device interference.
3Productivity
If multiple through hole vias are placed in peripheral region, then device density is improved, but interference between adjacent THVs increases
Solution Approach 1:
The patent applies segmentation by dividing each through hole via into distinct functional segments: an organic insulating material portion and a conductive shielding material portion. This segmentation allows each via to independently provide both electrical connection and EMI/RFI shielding, thereby reducing interference between adjacent vias while maintaining high device density in the peripheral region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces intra-device interference, enhancing signal integrity and maintaining the operational performance of semiconductor devices by providing a dedicated path for EMI/RFI discharge, thus improving the reliability and efficiency of semiconductor devices in high-frequency applications.
Implementation Method 1
A conductive layer is formed between the conductive THV and contact pads on the first and second semiconductor die
Implementation Method 2
A noise absorbing material is disposed around the conductive THV to isolate the first and second semiconductor die from intra-device interference
Data Source
AI summary
A semiconductor wafer has a plurality of semiconductor die. A peripheral region is formed around the die. An insulating material is formed in the peripheral region. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. A conductive layer is formed between the conductive THV and contact pads of the semiconductor die. A noise absorbing material is deposited in the peripheral region between the conductive THV to isolate the semiconductor die from intra-device interference. The noise absorbing material extends through the peripheral region from a first side of the semiconductor die to a second side of the semiconductor die. The noise absorbing material has an angular, semi-circular, or rectangular shape. The noise absorbing material can be dispersed in the peripheral region between the conductive THV.