Semiconductor Noise Isolation via Deep Trench Trapping
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Solution Overview
Problem
The manufacturing of integrated semiconductor devices on a single substrate is costly due to the need for numerous masks and photolithography processes, and existing noise reduction methods, such as junction guard rings, increase chip size and are not effective for RF CMOS transistors and Hall sensors, which are sensitive to noise.
Innovation Solution
An integrated semiconductor device with a noise isolation structure featuring deep trenches, trapping regions, and trench bottom doping regions on a semiconductor substrate, which includes a buried layer, well region, and highly doped regions to effectively block noise from affecting RF CMOS transistors and Hall sensors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If junction guard ring structure is used for noise reduction, then noise interference is reduced, but chip size increases
Solution Approach 1:
The patent transitions from planar guard ring structures to three-dimensional deep trench structures with multiple doping regions at different depths. The isolation structure extends vertically into the substrate with first doping regions at shallow depths and second doping regions at greater depths, creating a multi-layered noise barrier that provides effective noise isolation without increasing lateral chip dimensions.
2Adaptability or versatility
If multiple masks and photolithography processes are used for manufacturing integrated semiconductor devices, then device integration is achieved, but manufacturing cost increases
Solution Approach 1:
The patent combines multiple isolation structures (deep trenches, trapping regions, trench bottom doping regions) into a single integrated noise isolation system that can be formed using shared processing steps. The first and second doping regions are formed in sequence within the same trench structure, and the isolation structure serves multiple functions including noise blocking, electrical isolation, and mechanical support, reducing the need for separate manufacturing processes.
3Productivity
If transistors are manufactured on a single semiconductor substrate, then production efficiency is improved, but noise interference between transistors increases
Solution Approach 1:
The patent divides the semiconductor substrate into isolated regions using deep trench structures that physically separate sensitive transistors from noisy surrounding devices. The isolation structure creates distinct electrical zones with doped regions that block noise propagation, allowing multiple transistors to be manufactured on a single substrate while maintaining electrical independence and minimizing mutual interference.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution reduces noise interference between transistors, allowing for the cost-effective manufacturing of integrated semiconductor devices with improved noise insulation, enabling the simultaneous integration of RF CMOS transistors, Hall sensors, and other components on a single substrate without increasing chip size.
Implementation Method 1
an isolation structure located adjacent to the transistors, including deep trenches, trapping regions formed between the deep trenches, and trench bottom doping regions formed on the end of each of the deep trenches
Implementation Method 2
trapping regions formed between the deep trenches, and trench bottom doping regions formed on the end of each of the deep trenches
Data Source
AI summary
An integrated semiconductor device includes a first transistor and a second transistor formed on a semiconductor substrate, and an isolation structure located adjacent to the transistors, including deep trenches, trapping regions formed between the deep trenches, and trench bottom doping regions formed at the end of each of the deep trenches, wherein each of the trapping regions includes a buried layer, a well region formed on the buried layer, and a highly doped region formed on the well region.