Semiconductor Device Non-Uniform Oxidation Layer
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Solution Overview
Problem
Highly integrated semiconductor data storage devices face reliability issues due to their small size, which affects their electrical characteristics and requires improved manufacturing methods to enhance performance.
Innovation Solution
A method for manufacturing semiconductor devices involves patterning a semiconductor substrate to form active patterns with specific trenches, forming a semiconductor layer with controlled thickness, and oxidizing it to create a device isolation layer that allows for the formation of a gate electrode, thereby improving electrical characteristics by securing channel regions and preventing leakage currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size of elements or components is reduced to achieve high integration, then productivity and integration density are improved, but reliability and electrical characteristics deteriorate
Solution Approach 1:
The patent applies local quality by forming a semiconductor layer with non-uniform thickness where the thickness at the bottom of the trench is greater than at the top surface of active patterns. This localized thickness variation creates a oxidation-resistant region at the trench bottom that prevents leakage currents, thereby improving reliability without sacrificing integration density
Solution Approach 2:
The patent implements preliminary action by pre-forming the semiconductor layer with controlled thickness distribution before oxidation. The layer is designed to have greater thickness at the trench bottom to prevent oxidation during subsequent processing, which proactively prevents leakage current formation and ensures reliable electrical characteristics
2Manufacturing precision
If a uniform thickness semiconductor layer is formed, then manufacturing precision is simplified, but leakage currents occur due to oxidation at the trench bottom
Solution Approach 1:
The patent uses local quality by creating a semiconductor layer with spatially varying thickness. The layer thickness is specifically controlled to be greater at the trench bottom than at the active pattern top surfaces, creating a localized oxidation barrier that prevents leakage currents while maintaining overall manufacturing precision
Solution Approach 2:
The patent applies parameter changes by varying the thickness parameter of the semiconductor layer across different locations. The thickness transitions from a uniform value to a gradient distribution where the bottom trench region has greater thickness, fundamentally changing the oxidation behavior and eliminating leakage currents
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the electrical characteristics of semiconductor devices by ensuring proper channel formation and reducing leakage currents, thereby improving the reliability and performance of data storage devices.
Implementation Method 1
forming a device isolation layer on the semiconductor layer so that the device isolation layer covers the semiconductor layer, fills the first trench covered by the semiconductor layer, and the semiconductor layer is oxidized
Data Source
AI summary
Provided is a method for manufacturing a semiconductor device including: patterning a substrate to form a plurality of active patterns including two adjacent active patterns having a first trench therebetween; forming a semiconductor layer on the plurality of active patterns to cover the plurality of active patterns; forming a device isolation layer on the semiconductor layer to cover the semiconductor layer for oxidization and fill the first trench; patterning the device isolation layer and the plurality of active patterns so that a second trench intersecting the first trench is formed and the two active patterns protrudes from the device isolation layer in the second trench; and forming a gate electrode in the second trench. Here, a first thickness of the semiconductor layer covering a top surface of each of the two active patterns is greater than a second thickness of the semiconductor layer covering a bottom of the first trench.