Semiconductor Substrate Processing With Dynamic Nozzle-Angle Control
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in uniformly applying chemical solutions on semiconductor substrates during development processes, leading to defects due to backflow and splashing phenomena, which affect the quality of semiconductor devices.
Innovation Solution
A substrate processing apparatus with a rotatable substrate stage and a discharge device featuring a nozzle arm and angle changer that adjusts the angle and speed of chemical solution discharge in response to the substrate's rotational velocity, ensuring uniform application by minimizing the difference between the chemical solution's landing speed and the substrate's linear velocity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the nozzle discharges chemical solution at a fixed angle while the substrate rotates, then the discharge mechanism is simple, but the chemical solution experiences backflow and splashing phenomena causing non-uniform application
Solution Approach 1:
The nozzle angle is changed dynamically during the discharge process. As the substrate rotates and the nozzle moves radially outward, the nozzle angle is adjusted to maintain optimal discharge conditions. This dynamic adjustment prevents backflow and splashing phenomena, ensuring uniform chemical solution application across the substrate surface.
Solution Approach 2:
The discharge parameters (nozzle angle and radial position) are changed during the process to adapt to the rotating substrate. By varying the nozzle angle according to the substrate's rotational velocity and the nozzle's radial position, the system maintains consistent chemical solution application quality throughout the development process.
2Area of stationary object
If the nozzle arm moves from central region to peripheral region of the substrate, then the chemical solution can cover the entire substrate surface, but the linear velocity difference causes backflow and splashing
Solution Approach 1:
Different regions of the substrate receive chemical solution discharge at different nozzle angles. As the nozzle moves from the central region to the peripheral region, the nozzle angle is adjusted locally to compensate for the increasing linear velocity. This local adaptation ensures uniform application quality across different areas of the substrate.
Solution Approach 2:
The nozzle angle is dynamically adjusted during the radial movement from central to peripheral regions. This dynamic adjustment compensates for the velocity difference between regions, preventing backflow and splashing phenomena while ensuring complete and uniform coverage of the entire substrate surface.
3Productivity
If the substrate rotates at high angular velocity to improve processing efficiency, then the productivity increases, but the chemical solution application becomes non-uniform due to velocity mismatch
Solution Approach 1:
The nozzle angle is dynamically adjusted in response to the substrate's rotational velocity. When the substrate rotates at high angular velocity, the nozzle angle is modified to maintain optimal discharge conditions, preventing backflow and splashing. This dynamic adaptation allows high-speed processing while maintaining uniform chemical solution application.
Solution Approach 2:
The system uses feedback from the substrate's rotational velocity to adjust the nozzle angle. By monitoring the angular velocity and radial position, the control system adjusts the nozzle angle in real-time to compensate for velocity mismatch, ensuring uniform application even at high processing speeds.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively prevents backflow and splashing phenomena, ensuring stable and uniform application of chemical solutions, thereby maintaining the integrity of circuit patterns and removing contaminants on semiconductor substrates.
Implementation Method 1
a substrate stage configured to support a semiconductor substrate and rotatable at a predetermined angular velocity
Implementation Method 2
a nozzle provided on the nozzle arm toward the semiconductor substrate, the nozzle configured to discharge the chemical solution onto the semiconductor substrate at a predetermined angle from a surface of the semiconductor substrate
Data Source
AI summary
A substrate processing apparatus includes a substrate stage configured to support a semiconductor substrate, the substrate stage being rotatable at a predetermined angular velocity, and a discharge device above the substrate stage, the discharge device being configured to discharge a chemical solution onto the semiconductor substrate, and the discharge device including a nozzle arm movable along a radial direction from a central region of the substrate stage to a peripheral region surrounding the central region, a nozzle on the nozzle arm, the nozzle facing the substrate stage, and the nozzle being configured to discharge the chemical solution onto the semiconductor substrate at a predetermined angle relative to a surface of the semiconductor substrate, and an angle changer configured to change the predetermined angle such that the predetermined angle gradually decreases as the nozzle arm moves from the central region to the peripheral region.