Semiconductor Light-Emitting Structure With Offset Vias for Wire Bonding
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Solution Overview
Problem
Conventional semiconductor light-emitting devices face challenges in maintaining high current density while minimizing light absorption and electrode blockage, particularly in structures like flip-chip, where the substrate can absorb light and traditional electrode arrangements lead to issues like electrode collapse and abnormal wire bonding.
Innovation Solution
The semiconductor light-emitting device employs an annular or multi-via insulating layer structure to support the second electrode, reducing voids and improving metal density, with a second electrical connection layer that extends through offset vias and includes a reflective first electrical connection layer for enhanced light reflection and structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the electrode area is increased to improve current expansion, then the current handling capability is improved, but the light-emitting surface area is reduced
Solution Approach 1:
The patent transitions from a conventional planar electrode arrangement to a three-dimensional vertical structure by extending the electrical connection layer through vias in the insulating layer. This allows the electrode to contact the semiconductor layer at multiple depth levels, effectively increasing the contact area without occupying additional lateral space that would reduce the light-emitting surface.
2Stability of the object's composition
If the substrate is used to support the semiconductor sequence, then the structural stability is improved, but the substrate absorbs light
Solution Approach 1:
The patent introduces an insulating layer as an intermediary between the substrate and the semiconductor light-emitting sequence. This insulating layer with via structures provides both mechanical support and electrical connection while being transparent to light, thereby preventing the substrate from directly absorbing the emitted light while maintaining structural stability.
3Reliability
If the electrical connection layer is extended through vias, then the wire bonding reliability is improved, but the device complexity increases
Solution Approach 1:
The patent divides the insulating layer into multiple segments with separate vias at different positions and depths. This segmentation allows the electrical connection layer to be distributed across multiple connection points, improving wire bonding reliability by providing redundant pathways and better force distribution, while the modular via structure keeps the manufacturing process manageable.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables efficient light emission and high current handling without electrode collapse, improving wire bonding reliability and maintaining light output by distributing the wire bonding force effectively and reducing metal voids within the insulating layer.
Implementation Method 1
the first electrical connection layer is transparent to light emitted by the light-emitting layer or reflects the light emitted by the light-emitting layer
Data Source
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AI summary
A semiconductor light-emitting device includes a substrate and a multi-layer structure stacked on the substrate, the multi-layer structure including a second electrical connection layer, an insulating layer, a first electrical connection layer, and a semiconductor light-emitting sequence, in order from the substrate side, the semiconductor light-emitting sequence including a first conductivity type semiconductor layer, a light-emitting layer and a second conductivity type semiconductor layer; a first electrode for external wire bonding electrically connected to the first conductivity type semiconductor layer by the first electrical connection layer; a second electrode for external wire bonding, electrically connected to the second conductivity type semiconductor layer by a second electrical connection layer. The semiconductor light-emitting sequence, the first electrode and the second electrode are located on the same side of the substrate. Characterized in that, the second electrical connection layer includes a first portion and a second portion. The first portion is located at one side of the insulating layer. The second portion extends from the first portion at one side of the insulating layer through a via in the insulating layer to the other side of the insulating layer to connect with the second electrode. The second portion of the second electrical connection layer is provided at a position other than a center positon below the second electrode.