Semiconductor Contact Structure With Semi-Metal Ohmic Interface
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Solution Overview
Problem
The continuous reduction of line width in the semiconductor industry leads to excessive contact resistance due to Schottky barriers and metal-induced gap states when metal is in contact with semiconductors, failing to meet device working requirements.
Innovation Solution
A semiconductor structure comprising a base with a conductive contact hole, a metal sulfide layer, a semi-metal layer, and a barrier layer, where the Fermi energy level of the semi-metal layer is higher than the conduction band of the metal sulfide layer, allowing for a zero Schottky barrier and ohmic contact, reducing contact resistance through increased contact area and electron saturation of the metal-induced gap state.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal is in contact with semiconductor, then electrical connection is established, but Schottky barrier and metal-induced gap state lead to excessive contact resistance
Solution Approach 1:
The patent introduces a metal sulfide layer as an intermediary between the metal and semiconductor. This intermediate layer modifies the interface properties, enabling orbital resonance between the metal and semiconductor bands, which eliminates the Schottky barrier and reduces contact resistance while maintaining electrical connection.
Solution Approach 2:
The patent changes the physical and chemical parameters of the interface by using specific metal sulfide materials with controlled thickness and composition. By adjusting the band structure parameters and creating orbital resonance conditions, the contact resistance is reduced while eliminating the harmful Schottky barrier effect.
2Productivity
If continuous reduction of line width is implemented, then device integration density increases, but contact resistance becomes excessive and cannot meet device working requirements
Solution Approach 1:
The patent applies local quality improvement by introducing the metal sulfide layer specifically at the contact interface region where the problem occurs. This localized modification addresses the contact resistance issue without affecting the overall device scaling and integration density, allowing continuous line width reduction while maintaining reliable electrical connection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor structure achieves a good ohmic contact between the semi-metal and metal sulfide layers, significantly reducing contact resistance and RC delay, thereby meeting device performance requirements.
Implementation Method 1
allowing for a zero Schottky barrier and ohmic contact, reducing contact resistance through orbital resonance and inductive electric dipole distribution
Implementation Method 2
the Schottky barrier and the metal-induced gap state lead to excessive contact resistance
Implementation Method 3
reducing contact resistance through orbital resonance and inductive electric dipole distribution
Data Source
AI summary
A semiconductor structure includes a base provided with a conductive contact hole, a metal sulfide layer formed in the conductive contact hole and covering a bottom wall of the conductive contact hole, a semi-metal layer formed on a surface of the metal sulfide layer, a barrier layer covering a surface of the semi-metal layer and a sidewall of the conductive contact hole and a conductive contact structure disposed in an accommodation hole delimited by the barrier layer.