Semiconductor Pattern OPC With Dense Weak-Region Dissection
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Solution Overview
Problem
Conventional optical proximity correction methods fail to account for uneven pattern density in local regions and the integration of diverse semiconductor devices on a single chip, leading to transfer defects and reduced manufacturing yield.
Innovation Solution
An improved optical proximity correction method that sets higher density dissection points in weak regions, considering the correlation between patterns and their adjacency or overlap, to enhance accuracy and reduce defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional optical proximity correction method is used to correct the whole circuit pattern, then the correction process is simple and fast, but the exposure deviation caused by uneven pattern density in local regions cannot be eliminated
Solution Approach 1:
The patent divides the circuit pattern into multiple local regions based on pattern density characteristics, identifying weak regions where exposure deviation is likely to occur. By segmenting the correction process into global OPC and local weak region correction stages, the method achieves high exposure accuracy without requiring complete re-correction of the entire pattern, thus balancing precision and complexity.
Solution Approach 2:
The patent applies different correction strategies to different regions: global OPC is applied to the entire circuit pattern, while enhanced local correction with higher density dissection points is applied specifically to weak regions. This local quality approach ensures that computational resources are concentrated where most needed, improving exposure accuracy in critical areas without unnecessarily complicating the overall correction process.
2Manufacturing precision
If higher density dissection points are set in weak regions, then the optical proximity correction accuracy in these regions is improved, but the calculation complexity and processing time increase
Solution Approach 1:
The patent segments the circuit pattern into weak regions and non-weak regions based on density criteria. By applying higher density dissection points only to weak regions rather than uniformly across the entire pattern, the method achieves improved OPC accuracy where needed while minimizing the increase in calculation complexity and processing time.
Solution Approach 2:
The patent implements local quality by using higher density dissection points specifically in weak regions where exposure deviation is most likely to occur, while using standard density dissection points in non-weak regions. This targeted approach optimizes the balance between correction accuracy and processing efficiency by concentrating computational resources on critical areas.
3Adaptability or versatility
If conventional OPC method is used for integrated circuits with diverse devices, then the manufacturing process is simple, but the different pattern densities between regions cause transfer defects
Solution Approach 1:
The patent segments the integrated circuit pattern into multiple local regions and identifies weak regions based on density criteria. This segmentation enables the correction method to adapt to diverse device integration by treating different density regions appropriately, improving pattern transfer accuracy across the entire chip while maintaining simplicity through automated region classification.
Solution Approach 2:
The patent applies local quality by using higher density dissection points specifically in weak regions caused by uneven pattern density in integrated circuits with diverse devices. This approach enhances adaptability to SOC architecture while improving pattern transfer accuracy in critical areas where different device types create density variations.
Data Source
AI summary
The invention provides a method for forming a semiconductor pattern by optical proximity correction (OPC), which comprises the following steps: inputting a predetermined pattern in a system, performing an optical proximity correction step on the predetermined pattern in the system to correct the predetermined pattern into a correction pattern, and forming the correction pattern on a substrate, wherein the optical proximity correction step comprises: setting a plurality of dissection point on the edge of a weak region of the predetermined pattern, and defining other regions in the predetermined pattern except the weak regions as non-weak regions, and setting a plurality of third dissection points on the edges of the non-weak regions, wherein the density of the dissection points in a fixed unit length is greater than that of the third dissection points in a fixed unit length.