Semiconductor Electrode Opening Structure for Lower Chip Height
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Solution Overview
Problem
Conventional semiconductor devices face an increased chip height due to the need for vertically bonded wiring at vertically oriented opening parts, which restricts wiring curvature and necessitates a larger chip structure.
Innovation Solution
The formation of at least one step on the sidewall of the opening part through multiple etching processes allows for a gradual sidewall angle, enabling non-vertical bonding of wiring and reducing chip height.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single etching process is used to form the opening part, then the manufacturing process is simple, but the sidewall becomes vertical which requires vertical wiring bonding and increases chip height
Solution Approach 1:
The single etching process is segmented into multiple etching steps (first etching process and second etching process). The first etching process forms an opening part with a substantially vertical sidewall, and the second etching process forms a recessed part with a gradual sidewall angle. This segmentation allows the opening part to have both vertical and gradual sidewall portions, enabling wiring to be bonded at angles other than vertical while maintaining manufacturing feasibility.
Solution Approach 2:
The invention introduces a new dimensional aspect by creating a recessed part that extends horizontally from the opening part. This additional horizontal dimension allows the wiring to follow a curved path instead of being constrained to a vertical path, thereby reducing chip height while maintaining electrical connectivity.
2Reliability
If wiring is bonded vertically to avoid contact with the sidewall, then insulation is maintained, but the chip height increases
Solution Approach 1:
The sidewall is segmented into two distinct portions: a vertical portion and a gradual portion. The gradual sidewall angle portion provides sufficient insulation distance between the wiring and the opening part sidewall, allowing the wiring to be bonded at angles other than vertical while maintaining reliable insulation performance.
3Length of stationary object
If multiple etching processes are used to form steps on the sidewall, then wiring curvature can be increased and chip height reduced, but the manufacturing process becomes more complex
Solution Approach 1:
The manufacturing process is divided into two main etching stages: a first etching process that creates the opening part with a vertical sidewall, and a second etching process that creates the recessed part with a gradual sidewall angle. This segmentation makes the complex process manageable and implementable using standard semiconductor manufacturing techniques.
Data Source
AI summary
A method of manufacturing a semiconductor device includes: forming a primary side electrode on a substrate; forming an insulating layer on the substrate and the primary side electrode; forming a secondary side electrode facing the primary side electrode with the insulating layer in between and magnetically or capacitively connected to the primary side electrode on the insulating layer; forming an opening part at the insulating layer by etching to expose part of the primary side electrode; and bonding wiring to the primary side electrode exposed through the insulating layer at the opening part, wherein at least one step is formed on a sidewall of the opening part by performing the etching in a plurality of processes.