Semiconductor Opening Masking for Ion Implantation Control
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Solution Overview
Problem
The reduction in size and distance between semiconductor components leads to scattering effects during ion implantation, making it difficult to control the doping profile and resulting in non-uniform thickness of the converting layer, which negatively affects the insulation effect.
Innovation Solution
A semiconductor process where a mask layer is used to form an opening with a side wall covered by the mask, allowing for a vertical ion implantation process that only implants the bottom portion, followed by a conversion process forming a converting layer with a thicker, uniform thickness on the side wall, enhancing insulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the dimensions of the opening are reduced to improve integration level, then the level of integration is improved, but the scattering effect occurs during ion implantation making doping profile difficult to control
Solution Approach 1:
The mask layer is formed beforehand to cover the side wall of the opening before ion implantation. This preliminary protective action prevents ions from reaching the side wall, ensuring that doping occurs only at the bottom portion of the opening, thereby maintaining precise doping profile control despite reduced opening dimensions
Solution Approach 2:
The mask layer serves as an intermediary protective layer between the ion implantation process and the opening structure. It selectively blocks ions from reaching the side wall while allowing the process to proceed, thus mediating the interaction between the ion beam and the reduced-dimension opening to prevent scattering effects
2Manufacturing precision
If ion implantation is performed on the opening surface to form converting layer, then the converting layer is formed, but the doping depth varies between upper and lower portions of the side wall resulting in non-uniform thickness
Solution Approach 1:
The mask layer is applied in advance to cover the side wall before ion implantation occurs. This preliminary protection ensures uniform doping depth at the bottom portion and prevents variable doping on the side wall, resulting in a converting layer with uniform thickness and reliable insulation properties
Solution Approach 2:
The mask layer provides selective protection to different regions: the side wall is covered and protected from ion implantation, while the bottom portion remains exposed for doping. This local differentiation ensures that the converting layer forms with uniform thickness on the side wall, improving insulation reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process ensures a superior insulation effect by maintaining the side wall undoped and forming a uniformly thicker converting layer on the side wall, improving the semiconductor device characteristics and simplifying the fabrication process while reducing costs.
Implementation Method 1
a vertical ion implantation process is performed on the bottom portion of the second opening through the first opening
Implementation Method 2
the converting process includes an oxidation process
Data Source
AI summary
A semiconductor process is provided. A mask layer is formed on a substrate and has a first opening exposing a portion of the substrate. Using the mask layer as a mask, a dry etching process is performed on the substrate to form a second opening therein. The second opening has a bottom portion and a side wall extending upwards and outwards from the bottom portion, wherein the bottom portion is exposed by the first opening and the side wall is covered by the mask layer. Using the mask layer as a mask, a vertical ion implantation process is performed on the bottom portion. A conversion process is performed, so as to form converting layers on the side wall and the bottom portion of the second opening, wherein a thickness of the converting layer on the side wall is larger than a thickness of the converting layer on the bottom portion.