Semiconductor Pad Electrode OPM Structure for Leakage Prevention
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Solution Overview
Problem
Existing semiconductor device manufacturing techniques face challenges in achieving both improved reliability and miniaturization due to issues with foreign substances on surface protective films leading to dielectric strength decline and increased manufacturing costs, particularly with electroless plating methods causing leakage and deformation of plating films.
Innovation Solution
A semiconductor device structure where the conductive layer OPM is formed with a thickness smaller than the surface protective film, ensuring the conductive layer lies only inside the opening and not over the surface protective film, thereby increasing the effective distance between neighboring conductive layers and reducing the risk of leakage, while also simplifying the manufacturing process to maintain cost-effectiveness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the electroless plating method is used to form an OPM electrode, then the manufacturing process is simplified, but foreign substances on the surface protective film are plated causing dielectric strength to decline
Solution Approach 1:
The patent extracts the conductive layer formation process from the surface protective film area by using a resist pattern mask that prevents plating solution contact with the surface protective film, thereby eliminating foreign substance plating while maintaining process simplicity
Solution Approach 2:
The patent introduces a resist pattern as an intermediary mask between the plating solution and the surface protective film, controlling where plating occurs and preventing harmful plating on the surface protective film while allowing necessary plating on the pad electrode
2Reliability
If the distance between neighboring OPM electrodes is increased to prevent leakage, then dielectric strength is improved, but device miniaturization becomes difficult
Solution Approach 1:
The patent converts the potential harm of foreign substance plating into a benefit by using controlled plating with a resist mask, which ensures plating only occurs where intended (on the pad electrode) and not where harmful (on the surface protective film), thereby maintaining small electrode spacing without leakage risks
3Reliability
If the electroplating method with resist pattern is used to form OPM electrode, then dielectric strength is improved, but manufacturing cost increases due to additional processing steps
Solution Approach 1:
The patent merges the resist pattern formation step with the existing OPM electrode fabrication process, using the same resist pattern for both defining the OPM electrode shape and controlling the plating area, thereby eliminating redundant processing steps while maintaining dielectric strength
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability of semiconductor devices by maintaining dielectric strength without increasing chip size, allowing for further miniaturization while reducing manufacturing costs by eliminating the need for additional processing steps and materials.
Implementation Method 1
the electroless plating method
Implementation Method 2
the electroplating method using a resist pattern as a mask
Data Source
AI summary
A semiconductor device and a method for manufacturing the semiconductor device which ensure improved reliability, permit further miniaturization, and suppress the increase in manufacturing cost. The semiconductor device includes: a pad electrode formed in the uppermost wiring layer of a multilayer wiring layer formed over a semiconductor substrate; a surface protective film formed in a manner to cover the pad electrode; an opening made in the surface protective film in a manner to expose the pad electrode partially; and a conductive layer formed over the pad electrode exposed at the bottom of the opening. The thickness of the conductive layer formed over the pad electrode is smaller than the thickness of the surface protective film formed over the pad electrode.