Semiconductor Optical Device Non-Linear Groove Parasitic Capacitance
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Solution Overview
Problem
Existing semiconductor optical devices with one-side electrode structures face challenges in reducing parasitic capacitance, which hinders high-speed operation due to difficulties in controlling thick organic film thickness and resulting level differences, leading to yield and reliability issues during manufacturing and mounting.
Innovation Solution
A multilayer structure is implemented with a semi-insulating substrate, p-type and n-type semiconductor layers, an active layer, an insulating layer, and a conductive layer, featuring a non-linear separation groove that separates the electrode structures, allowing for reduced parasitic capacitance and increased design flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a thick organic layer (e.g., BCB film) is formed to reduce parasitic capacitance, then the parasitic capacitance decreases, but the film thickness becomes difficult to control resulting in large level differences
Solution Approach 1:
The patent introduces an inorganic insulating layer as an intermediary between the electrodes and the organic insulating layer. This inorganic layer serves as a mediator that enables precise thickness control through standard semiconductor fabrication processes, while the organic layer on top provides the capacitance reduction function. The intermediary layer resolves the conflict between achieving low capacitance and maintaining manufacturing precision.
Solution Approach 2:
The patent employs a composite insulating structure combining inorganic and organic materials. The inorganic insulating layer (e.g., SiO2, Si3N4) provides precise thickness control and structural stability, while the organic insulating layer (e.g., BCB) provides low dielectric constant properties for capacitance reduction. This composite approach leverages the strengths of both material types to simultaneously achieve manufacturing precision and low parasitic capacitance.
2Loss of energy
If a thick organic layer is formed to reduce parasitic capacitance, then the capacitance decreases, but large level differences occur causing yield deterioration
Solution Approach 1:
The inorganic insulating layer acts as a mediator that prevents the direct formation of thick organic layers. By providing a precisely controllable inorganic base layer, it enables the overall insulating structure to achieve both sufficient thickness for capacitance reduction and uniformity for manufacturing reliability, thereby preventing yield deterioration.
Solution Approach 2:
The patent changes the material parameter from purely organic to a combination of inorganic and organic materials. This parameter change allows the use of standard semiconductor deposition processes for the inorganic layer, which provide precise thickness control and uniformity, thereby maintaining high manufacturing yield while achieving the required insulating thickness for low capacitance.
3Loss of energy
If a thick organic layer is formed to reduce parasitic capacitance, then the capacitance decreases, but surface irregularities occur affecting mounting quality
Solution Approach 1:
The inorganic insulating layer serves as a mediator between the substrate and the organic layer. It provides a flat, well-controlled surface that prevents surface irregularities and swelling. This intermediary layer ensures that the organic layer can be formed uniformly, maintaining surface flatness required for high-quality mounting while still achieving sufficient thickness for capacitance reduction.
Solution Approach 2:
The composite structure of inorganic and organic insulating layers combines the surface stability and precision of inorganic materials with the low dielectric constant of organic materials. The inorganic layer provides a stable, flat foundation that prevents surface irregularities, while the organic layer contributes to capacitance reduction, achieving both surface quality and electrical performance.
4Loss of energy
If separation grooves are formed to reduce parasitic capacitance, then the capacitance decreases, but the design freedom is reduced
Solution Approach 1:
The inorganic insulating layer acts as an intermediary that enables capacitance reduction through material properties rather than structural constraints. This allows the design to maintain flexibility and adaptability, as the insulating function is achieved through the layered material structure rather than fixed geometric features like separation grooves, thereby preserving design freedom.
Data Source
AI summary
Provided is a semiconductor optical device, an arrayed semiconductor optical device, an optical module having a structure to reduce the parasitic capacitance as well as a high design degree of freedom and having a multilayer structure in which a semi-insulating substrate, a first semiconductor layer having one conductive type, an active layer having light emission function, a second semiconductor layer having the other conductive type, an insulating layer, and a conductive layer are stacked in order from the bottom. The multilayer structure includes a light emitting structure, a first electrode structure, and a second electrode structure. In the semi-insulating substrate and the first semiconductor layer, a first grove which separates the second electrode structure from a remaining portion and approaches the second electrode structure with a non-linear shape rather than a linear shape in its entirety is formed.