Semiconductor Optical Device High Frequency Leakage Suppression
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Solution Overview
Problem
The existing semiconductor optical devices with integrated DFB lasers and EA modulators face issues with high frequency voltage leakage due to parasitic inductance and capacitance from wire connections, leading to deterioration in optical signal quality.
Innovation Solution
The semiconductor optical device incorporates a chip capacitor connected in parallel to the laser and a chip inductor connected in series to the capacitor, with direct bonding between the inductor and capacitor terminals, reducing parasitic components and minimizing high frequency component leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If wire connections are used to connect chip inductor and chip capacitor, then ease of manufacture is improved, but parasitic inductance and capacitance increase causing deterioration in high frequency characteristics
Solution Approach 1:
The chip inductor and chip capacitor are directly bonded together to form an integrated passive component assembly, eliminating the need for separate wire connections. This merging of components removes the parasitic inductance and capacitance introduced by wire bonds while maintaining ease of manufacture through direct bonding techniques.
Solution Approach 2:
The wire connection element is extracted/removed from the circuit by directly bonding the chip inductor and chip capacitor terminals together. This eliminates the source of parasitic inductance and capacitance that would otherwise be introduced by wire bonds, thereby improving high frequency characteristics.
2Reliability
If passive circuit with wire-connected components is used to suppress high frequency leakage, then high frequency suppression is improved, but parasitic components from wire bonds cause unintended resonance
Solution Approach 1:
The wire connection is extracted/removed from the passive circuit by directly bonding the chip inductor and chip capacitor terminals. This eliminates the parasitic inductance and capacitance generated by wire bonds that cause unintended resonance, while preserving the high frequency suppression function of the passive circuit.
Solution Approach 2:
The chip inductor and chip capacitor are merged into a single bonded assembly, eliminating the wire bond interface that generates parasitic components. This merging maintains the passive circuit's ability to suppress high frequency leakage while removing the source of harmful parasitic inductance and capacitance.
3Reliability
If direct bonding of chip inductor and chip capacitor terminals is implemented, then parasitic components are reduced improving high frequency characteristics, but manufacturing complexity increases
Solution Approach 1:
The chip inductor and chip capacitor terminals are directly bonded together in a single integrated assembly, reducing parasitic components and improving high frequency characteristics. While the bonding process adds complexity, it eliminates the need for separate wire connection steps and reduces the overall number of discrete components and interconnections required.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses the influence of high frequency voltage on the laser portion, enhancing the frequency characteristics and maintaining high-quality optical signal transmission.
Implementation Method 1
a chip capacitor that is electrically connected in parallel to the laser; a chip inductor that is electrically connected in series to the chip capacitor
Implementation Method 2
a chip inductor that is electrically connected in series to the chip capacitor, electrically connected in series to the laser and the chip capacitor
Implementation Method 3
a solder or a conductive adhesive that directly bonds the first terminal of the chip inductor and the chip capacitor to each other
Implementation Method 4
a solder or a conductive adhesive that directly bonds the first terminal of the chip inductor and the chip capacitor to each other
Implementation Method 5
a modulator for modulating the light using an electroabsorption effect
Data Source
AI summary
A semiconductor optical device includes: a laser for emitting light; a modulator for modulating the light using an electroabsorption effect; a chip capacitor that is electrically connected in parallel to the laser; a chip inductor that is electrically connected in series to the chip capacitor, is electrically connected in series to the laser and the chip capacitor as a whole, and includes a first terminal and a second terminal; a solder or a conductive adhesive that directly bonds the first terminal of the chip inductor and the chip capacitor to each other; an electrical wiring group in which the laser, the modulator, the chip capacitor, and the chip inductor are electrically connected to each other; and a substrate on which the laser, the modulator, the chip capacitor, and the chip inductor are mounted.