Semiconductor Optical Device Current Regulation Region
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Solution Overview
Problem
Semiconductor optical devices face challenges in achieving high light output while maintaining low coherence and efficiency, as increasing current or waveguide length leads to heat dissipation issues, laser oscillation, and reduced light emission spectrum width.
Innovation Solution
A semiconductor optical device with a ridge stripe structure and a current regulation region adjacent to the ridge stripe structure, where the current regulation region prevents leakage current and optimizes carrier density, ensuring high light emission spectrum width and reduced speckle noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If much current is applied to acquire large light output, then light output increases, but heat dissipation burden increases and laser oscillation may occur
Solution Approach 1:
The device is divided into a light emission region (ridge stripe structure) and a current regulation region, separating the functions of light generation and current control to optimize performance without excessive heat generation
Solution Approach 2:
Different regions of the semiconductor device are given different properties: the ridge stripe structure portion has optimized optical properties for light emission, while the current regulation region has optimized electrical properties for current control, allowing each region to function at its optimal characteristics
2Illumination intensity
If waveguide length is increased to acquire large light output, then light intensity increases, but light emission spectrum width is narrowed and coherence is reduced
Solution Approach 1:
The waveguide is segmented into a light emission region with limited length and a current regulation region, preventing excessive amplification that would narrow the spectrum while still achieving sufficient light output through optimized current distribution
Solution Approach 2:
The invention changes the electrical parameters (carrier density, current distribution) rather than extending the physical length of the light emission path, thereby maintaining broad spectrum width while achieving high light output through enhanced carrier injection efficiency
3Illumination intensity
If waveguide length is increased to acquire large light output, then light intensity increases, but device size increases and package reduction becomes difficult
Solution Approach 1:
The current regulation region is positioned adjacent to the ridge stripe structure at the second end surface side, optimizing current injection locally rather than requiring a long waveguide, thereby achieving high light output in a compact form factor suitable for package reduction
4Quantity of substance
If current regulation region is positioned too close to ridge stripe structure, then carrier density control improves, but leakage current increases
Solution Approach 1:
The current regulation region acts as an intermediary zone between the current injection contacts and the light emission region, controlling carrier density while preventing direct leakage paths through optimized positioning and structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves increased light emission spectrum width, reduced speckle noise, and improved luminous efficiency by preventing leakage current and optimizing carrier density, allowing for high light output without heat dissipation issues.
Implementation Method 1
A generation source of light is spontaneously emitted light generated from a portion of an active layer
Implementation Method 2
the light undergoes more amplification in accordance with stimulated emission in the waveguide
Implementation Method 3
a current regulation region provided to be adjacent to at least one of ridge stripe adjacent portions positioned at both sides of the ridge stripe structure portion
Data Source
AI summary
A semiconductor optical device includes: a ridge stripe structure portion 20 in which a first compound semiconductor layer 31, an active layer 32, and a second compound semiconductor layer 32 are stacked and which has a first end surface 21 which emits light and a second end surface 22 opposite to the first end surface 21; and a current regulation region 41 provided to be adjacent to at least one of ridge stripe adjacent portions 40 positioned at both sides of the ridge stripe structure portion 20, at the second end surface side, and to be away from the ridge stripe structure portion 20. A bottom surface of the current regulation region 41 is under the active layer 33, and a top surface of the ridge stripe adjacent portion 40 excluding the current regulation region 41 is above the active layer 33.