Semiconductor Optical Integrated Device Buried Hetero Structure Waveguide
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Solution Overview
Problem
Conventional methods for integrating buried hetero structure waveguides and deep ridge waveguides in semiconductor optical integrated devices face challenges in optimizing performance, as each type requires distinct design parameters, leading to a trade-off in performance between the two.
Innovation Solution
A semiconductor optical integrated device is designed with buried hetero structure waveguide portions and ridge waveguide portions, where the thickness of the upper cladding layer in the buried hetero structure waveguide portions is greater than that in the ridge waveguide portions, allowing for optimal design and performance in both configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If different waveguide structures are integrated in the same semiconductor device, then multi-function and high-performance is achieved, but optimal design for each waveguide type cannot be simultaneously realized
Solution Approach 1:
The patent resolves the contradiction between multi-function capability and individual waveguide performance by implementing local quality through spatially differentiated upper cladding layer thicknesses. The semiconductor device is divided into functional regions with distinct waveguide structures, and each region is assigned a locally optimized upper cladding layer thickness. This enables the device to simultaneously provide multiple functions (buried hetero structure waveguide functions and deep ridge waveguide functions) while each function operates with its own optimal design parameters.
Solution Approach 2:
The patent applies segmentation by dividing the semiconductor device into distinct functional regions: a buried hetero structure waveguide portion and a deep ridge waveguide portion. Each segmented region is assigned a specific upper cladding layer thickness optimized for its intended function. This segmentation strategy allows independent optimization of each waveguide type while maintaining them within a single integrated device, thereby achieving both multi-functionality and optimal individual performance.
Data Source
AI summary
A semiconductor optical integrated device includes: a substrate; at least a lower cladding layer, a waveguide core layer, and an upper cladding layer sequentially layered on the substrate, a buried hetero structure waveguide portion having a waveguide structure in which a semiconductor cladding material is embedded near each of both sides of the waveguide core layer; and a ridge waveguide portion having a waveguide structure in which a semiconductor layer including at least the upper cladding layer protrudes in a mesa shape. Further, a thickness of the upper cladding layer in the buried hetero structure waveguide portion is greater than a thickness of the upper cladding layer in the ridge waveguide portion.