Semiconductor Optical Integrated Device Crystal Surface Angle
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Solution Overview
Problem
The butt joint growth method for integrating semiconductor optical devices on a single substrate can lead to crystal defects and abnormal growth at the junction between devices, affecting the reliability and initial characteristics of the semiconductor optical integrated device.
Innovation Solution
A semiconductor optical integrated device is fabricated with a first semiconductor optical device on a (001) plane and a second device on a (110) orientation, where the first core layer's end forms an angle of 55° to 90° with the (001) plane, allowing controlled mass transport to prevent stacking faults and abnormal growth during regrowth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the butt joint growth method is used to integrate semiconductor optical devices on a single substrate, then device integration is achieved, but crystal defects and abnormal growth occur at the junction between devices
Solution Approach 1:
The invention changes the physical parameter of the crystal surface angle to between 55° and 90° relative to the (001) plane. This parameter modification optimizes mass transport during regrowth, preventing stacking faults and abnormal growth at the junction while maintaining device integration capability
Solution Approach 2:
The invention performs preliminary formation of the first core layer with a specifically angled crystal surface before regrowth of the second semiconductor optical device. This preliminary action prepares the surface geometry to control mass transport and prevent defects during the subsequent regrowth process
2Ease of manufacture
If the crystal surface angle is not optimized, then fabrication is simpler, but stacking faults and abnormal growth occur at the junction
Solution Approach 1:
The invention specifies a particular range for the crystal surface angle (55°-90° to the (001) plane) to optimize mass transport control. This parameter change ensures proper junction quality while maintaining reasonable fabrication complexity through standard epitaxial growth processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively controls the occurrence of defects and abnormal growth, enhancing the reliability and performance of the semiconductor optical integrated device by optimizing the angle of the crystal surface between integrated devices.
Implementation Method 1
allowing controlled mass transport to prevent stacking faults and abnormal growth during regrowth
Data Source
AI summary
A semiconductor optical integrated device includes a first semiconductor optical device formed over a (001) plane of a substrate and a second semiconductor optical device which is formed over the (001) plane of the substrate in a (110) orientation from the first semiconductor optical device and which is optically connected to the first semiconductor optical device. The first semiconductor optical device includes a first core layer and a first clad layer which is formed over the first core layer and which has a crystal surface on a side on a second semiconductor optical device side that forms an angle θ greater than or equal to 55 degrees and less than or equal to 90 degrees with the (001) plane.