Semiconductor Optical Isolator Using Saturable Gain for Wideband PICs

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Solution Overview

Problem

Integrating optical isolators into photonic integrated circuits is challenging due to compatibility issues with semiconductor processes, and existing optical isolators using silicon waveguides are limited to narrow wavelength bands.

Innovation Solution

An optical isolator design incorporating a semiconductor substrate with an optical attenuator and amplifier, where the gain of the amplifier decreases with increasing light intensity, allowing for bidirectional light management and operation across a wide wavelength band.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If an optical isolator using a polarizing rotator is integrated into a photonic integrated circuit, then optical isolation function is achieved, but compatibility with semiconductor process is lost

Engineering Contradiction:
Improveoptical isolation functionVSAvoidcompatibility with semiconductor process
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent changes the operational parameters of the optical isolator by using nonlinear optical effects (Kerr effect, two-photon absorption) in silicon waveguides instead of polarization rotation. This allows the device to function using intensity-dependent refractive index changes rather than polarization-dependent rotation, making it compatible with standard semiconductor fabrication processes while maintaining optical isolation functionality.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent replaces the mechanical/physical polarization rotation mechanism with an optical nonlinear effect-based mechanism. Instead of using a polarizing rotator that relies on physical material properties incompatible with semiconductor processing, the invention uses intensity-dependent optical effects that can be implemented in silicon photonic structures fabricated using standard CMOS-compatible processes.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Ease of manufacture

If an optical isolator using silicon waveguide nonlinearity is used, then semiconductor process compatibility is improved, but operational wavelength band is reduced

Engineering Contradiction:
Improvesemiconductor process compatibilityVSAvoidoperational wavelength band
Core Design Contradiction:
Ease of manufactureVSAdaptability or versatility

Solution Approach 1:

The patent designs the optical isolator to be universally applicable across multiple wavelength bands by utilizing fundamental nonlinear optical effects in silicon that occur across a broad spectrum. The device structure and operating principle are designed to function at telecommunication wavelengths (1550 nm) and potentially other bands, making it versatile rather than limited to a narrow wavelength range.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent employs dynamic nonlinear optical effects (Kerr effect, two-photon absorption, free carrier absorption) that are inherently wavelength-tunable and can be optimized for different operating conditions. The intensity-dependent refractive index changes and absorption coefficients allow the device to adapt its performance characteristics across different wavelength regimes while maintaining semiconductor process compatibility.

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables efficient integration of optical isolators into photonic integrated circuits, providing high optical isolation and wide wavelength operation, facilitating applications in optical communication systems and LiDAR apparatus.

Implementation Method 1

an optical amplifier provided on the semiconductor substrate... a gain of the optical amplifier decreases based on an intensity of light incident on the optical amplifier increasing... a carrier density of the semiconductor material included in the optical amplifier may be greater than the transparency carrier density

Methodology Applied
Scientific EffectStimulated emission: Light Emitting Diode

Implementation Method 2

an optical attenuator... a carrier density of the semiconductor material included in the optical attenuator may be less than a transparency carrier density

Methodology Applied
Scientific EffectAbsorption: Absorption (EM radiation)

Data Source

PatentUS12153254B2Optical isolator and photonic integrated circuit including the same
Publication Date: 2024.11.26 SAMSUNG ELECTRONICS CO LTD
  • US12153254B2 patent drawing
  • US12153254B2 patent drawing
  • US12153254B2 patent drawing

AI summary

Provided is an optical isolator including a semiconductor substrate, an optical attenuator and an optical amplifier aligned with each other on the semiconductor substrate, an input optical waveguide connected to the optical attenuator, and an output optical waveguide connected to the optical amplifier, wherein a gain of the optical amplifier decreases based on an intensity of light incident on the optical amplifier increasing, wherein a first input light incident on the optical attenuator through the input optical waveguide is output as a first output light through the output optical waveguide, and a second input light incident on the optical amplifier through the output optical waveguide is output as a second output light through the input optical waveguide, and wherein when an intensity of the first input light and an intensity of the second input light are equal, an intensity of the first output light is greater than an intensity of the second output light.