Semiconductor Optical Element With Recessed Cladding for Light Confinement
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Solution Overview
Problem
Existing semiconductor optical elements using direct bandgap semiconductors face challenges in combining with silicon-based electronic devices, limiting their application range, and require improved light confinement and wavelength selectivity.
Innovation Solution
A semiconductor optical element is fabricated using indirect bandgap semiconductors with layered structures and recesses filled with media of lower refractive indices, enhancing light confinement and wavelength selectivity by controlling impurity concentrations and refractive indices in the cladding and core regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If direct bandgap semiconductors are used to fabricate light emitting elements, then light emission performance is improved, but compatibility with silicon-based electronic devices deteriorates
Solution Approach 1:
The patent changes the material parameter from direct bandgap semiconductor to indirect bandgap semiconductor (silicon), fundamentally altering the material's optical and electrical properties to achieve compatibility with silicon-based electronic devices while maintaining light emission capability through careful control of impurity concentrations and structural design
Solution Approach 2:
The invention creates a composite structure combining indirect bandgap semiconductor layers with specific impurity concentrations, forming a multi-layered semiconductor optical element that integrates light emission functionality with silicon-based electronic device compatibility
2Ease of manufacture
If conventional semiconductor optical element structures are used, then manufacturing simplicity is maintained, but light confinement performance deteriorates
Solution Approach 1:
The patent applies local quality by creating regions with different impurity concentrations within the semiconductor layers, where high-concentration regions provide strong light confinement while low-concentration regions maintain good optical properties, achieving both performance and manufacturability
Solution Approach 2:
The invention segments the semiconductor structure into multiple layers with different conductivity types and impurity concentrations, dividing the single uniform layer into distinct functional regions that collectively achieve superior light confinement while remaining compatible with standard manufacturing processes
3Device complexity
If conventional semiconductor optical element structures are used, then structural simplicity is maintained, but wavelength selectivity deteriorates
Solution Approach 1:
The patent achieves wavelength selectivity by precisely controlling the impurity concentration parameter in different semiconductor layers, where the specific concentration values determine the optical properties and emission wavelength without requiring complex structural modifications
Solution Approach 2:
The invention introduces dynamic control of optical properties through variable impurity concentrations in different layers, allowing the structure to selectively respond to specific wavelengths while maintaining overall structural simplicity and compatibility with standard fabrication processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves efficient light confinement and high wavelength selectivity, enabling the semiconductor optical element to emit light in the near-infrared to mid-infrared region, even when formed with silicon, thus expanding its application range and performance.
Implementation Method 1
one or more first recesses, the one or more first recesses containing a medium having a refractive index lower than a refractive index of the second indirect bandgap semiconductor part
Data Source
AI summary
A semiconductor optical element includes a first indirect bandgap semiconductor part that includes a first-conductivity-type impurity; a second indirect bandgap semiconductor part that includes a first-conductivity-type impurity; a third indirect bandgap semiconductor part that includes a second-conductivity-type impurity; a fourth indirect bandgap semiconductor part that includes a second-conductivity-type impurity; and a fifth indirect bandgap semiconductor part that includes a second-conductivity-type impurity. The first indirect bandgap semiconductor part has one or more first recesses. The one or more first recesses contain a medium having a refractive index lower than a refractive index of the second indirect bandgap semiconductor part. The fifth indirect bandgap semiconductor part has one or more second recesses. The one or more second recesses contain a medium having a refractive index lower than a refractive index of the fourth indirect bandgap semiconductor part.