Semiconductor Optical Device Reflection Suppression Layer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor optical devices suffer from optical noise due to scattered light, which degrades signal quality and deteriorates electrooptic characteristics, as the light absorption layer absorbs both necessary signal light and noise, leading to weakened optical output and increased operation current.
Innovation Solution
A semiconductor optical device with a reflection suppression layer positioned at the center of the optical waveguide section, shorter than its overall length, to absorb scattered light and reduce noise while minimizing the absorption of signal light, thereby maintaining good electrooptic characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a light absorption layer is provided over the overall length of the optical waveguide section, then optical noise is suppressed, but signal light intensity is weakened and electrooptic characteristics deteriorate
Solution Approach 1:
The light absorption layer is segmented into two distinct regions: a first light absorption layer positioned at the laser section side to absorb scattered light, and a second light absorption layer positioned at the optical waveguide section side. This segmentation allows the patent to suppress optical noise while minimizing the absorption of signal light, thereby resolving the contradiction between noise suppression and signal intensity maintenance.
Solution Approach 2:
Different regions of the light absorption layer are assigned different functions and properties. The first light absorption layer at the laser section side has higher absorption capability to suppress scattered light, while the second light absorption layer at the optical waveguide section side has lower absorption capability to minimize signal light loss. This local differentiation of quality resolves the contradiction by optimizing absorption characteristics for different functional zones.
2Object-affected harmful factors
If a light absorption layer is provided over the overall length of the optical waveguide section, then scattered light is absorbed, but operation current increases
Solution Approach 1:
The light absorption layer is divided into first and second regions with different absorption characteristics. The first region absorbs scattered light effectively while the second region allows signal light to pass with minimal absorption. This segmentation reduces the overall energy consumption required for noise suppression, thereby lowering operation current while maintaining optical noise suppression effectiveness.
Solution Approach 2:
The patent applies different absorption qualities to different spatial locations: high absorption quality at the laser section side for scattered light suppression, and low absorption quality at the optical waveguide section side for signal light preservation. This local quality differentiation optimizes energy efficiency by minimizing unnecessary absorption of signal light, thus reducing operation current.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses optical noise and maintains signal light intensity, ensuring compatible noise reduction and electrooptic performance.
Implementation Method 1
a reflection suppression layer that is provided either on a top surface of the upper cladding layer or above the core layer in the upper cladding layer
Implementation Method 2
the light absorption layer absorbs part of necessary signal light seeping out of the core layer
Data Source
AI summary
A semiconductor optical device is provided with a semiconductor substrate that has a length and width, a laser section that is provided on the semiconductor substrate and includes an active layer and an optical waveguide section that is provided adjacent to the laser section on the semiconductor substrate and is joined to the laser section. The optical waveguide section includes a core layer that is connected to an end portion of the active layer, and a pair of cladding layers between which the core layer is sandwiched and emits, from an emission end surface, light incident from the joining interface between the optical waveguide section and the laser section. The semiconductor optical device may be also provided with a reflection suppression layer that is provided on the upper surface of the optical waveguide section.