Butt-Jointed Semiconductor Optical Device Regrowth Layer
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Solution Overview
Problem
In semiconductor optical integrated devices, connection failures between epitaxially grown diffraction grating layers can occur due to level differences or discontinuities, leading to reduced yield and device reliability, particularly in butt-jointed interfaces of DFB and DBR regions.
Innovation Solution
A semiconductor integrated optical device with a regrowth layer formed by epitaxial growth across the entire surface above the active and waveguide layers, including a diffraction grating or etching stop layer, and a cladding layer, which also includes a spacer layer and a buffer layer to ensure continuous connectivity and alignment of optical axes, thereby reducing connection failures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If separate epitaxial growth is performed for DFB laser region and DBR mirror region, then independent optimization of each region is possible, but level differences and discontinuities occur at the butt-jointed interface
Solution Approach 1:
The patent merges the epitaxial growth processes of the DFB laser region and DBR mirror region into a single continuous growth step. This is achieved by forming a unified semiconductor laminated structure where the active layer, waveguide layer, and cladding layer are grown continuously across both regions, eliminating the interface discontinuities and level differences that occur with separate growth processes while maintaining the ability to independently design each region's optical characteristics
2Speed
If the DFB laser oscillator is shortened to 100 μm for high-speed modulation, then device speed increases, but handling difficulty at cleavage increases
Solution Approach 1:
The patent segments the laser device into distinct functional regions with a clear separation interface. By designing the DFB laser region and DBR mirror region as separate functional units that are butt-jointed at a well-defined interface, the device maintains a short total length for high-speed modulation while the segmented structure provides convenient handling and cleavage points for manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the yield and reliability of semiconductor optical integrated devices by ensuring continuous connectivity of diffraction gratings and etching stop layers, reducing manufacturing failures and maintaining flatness across the epitaxially grown layers.
Implementation Method 1
a semiconductor regrowth layer including at least one of a diffraction grating layer or an etching stop layer, which is formed by one epitaxial growth across an entire surface above the active layer and the waveguide layer
Data Source
AI summary
Provided is a butt-jointed (BJ) semiconductor integrated optical device having a high manufacturing yield. A semiconductor integrated optical device, which is configured such that, on a semiconductor substrate, a first semiconductor optical element including an active layer and a second semiconductor optical element including a waveguide layer are butt-jointed to each other with their optical axes being aligned with each other, includes: a semiconductor regrowth layer including at least one of a diffraction grating layer or an etching stop layer, which is formed by one epitaxial growth across an entire surface above the active layer and the waveguide layer; and a cladding layer formed above the semiconductor regrowth layer.