Semiconductor Optical Waveguide with Low-Refractive Conductive Cladding

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional optical modulators using polycrystalline and amorphous silicon suffer from significant optical propagation losses due to light scattering, which limits the performance of semiconductor devices in silicon photonics applications.

Innovation Solution

A semiconductor device with an optical waveguide structure that includes a dielectric layer and a conductive layer with a refractive index lower than the semiconductor layer, effectively confining light and reducing scattering losses by acting as a cladding layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If a second semiconductor layer made of polycrystalline silicon or amorphous silicon is formed on the insulating layer, then the optical modulator can change carrier density in the optical waveguide to adjust light phase, but optical propagation losses become large due to light scattering by the second semiconductor layer

Engineering Contradiction:
Improvephase adjustment capabilityVSAvoidoptical propagation loss
Core Design Contradiction:
Ease of operationVSLoss of energy

Solution Approach 1:

The patent removes the second semiconductor layer (polycrystalline silicon or amorphous silicon) that causes light scattering, extracting the harmful element from the system. The insulating layer is left exposed on the upper surface of the optical waveguide, eliminating the source of optical propagation losses while preserving the phase modulation functionality through carrier density control in the first semiconductor layer.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent applies different material properties to different regions: the first semiconductor layer maintains semiconductor characteristics for carrier density control, while the insulating layer provides optical transparency and low scattering in the region where light propagates. This local differentiation optimizes both electrical control and optical transmission properties.

Inventive Principle:
Principle #3Local quality

2Reliability

If light is substantially confined within the optical waveguide, then phase modulation can be achieved, but a portion of light still seeps out and is scattered by the second semiconductor layer

Engineering Contradiction:
Improvelight confinementVSAvoidlight scattering
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent converts the potential harm of light seeping out by removing the scattering source (second semiconductor layer) and allowing the insulating layer to interact with the evanescent field. The insulating layer, being optically transparent, transforms what would be a loss mechanism into a non-harmful interaction, maintaining light confinement benefits while eliminating scattering losses.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed structure significantly reduces optical losses by preventing light from escaping and scattering, thereby enhancing the performance and characteristics of semiconductor devices with optical waveguides.

Implementation Method 1

A refractive index of a material of the conductive layer is smaller than refractive index of a material of the first semiconductor layer

Methodology Applied
Scientific EffectRefraction: Refraction

Data Source

PatentUS11435645B2Semiconductor device and method of manufacturing the same
Publication Date: 2022.09.06 RENESAS ELECTRONICS CORP
  • US11435645B2 patent drawing
  • US11435645B2 patent drawing
  • US11435645B2 patent drawing

AI summary

A semiconductor device has a first semiconducting layer including an optical waveguide, a dielectric layer formed on the optical waveguide, and a conductive layer formed on the dielectric layer. A refractive index of a material of the conductive layer is smaller than a refractive index of a material of the first semiconductor layer.