Semiconductor Output Pad Capacitor Stack Structure

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Solution Overview

Problem

Conventional semiconductor devices face challenges in reducing load capacitance on output pads, which can lead to increased loading and inefficiencies in data transmission, especially when employing emphasis methods for high-frequency signal strengthening.

Innovation Solution

The use of a stack structure of metal lines, with insulating layers in between, functions as both an output pad and a capacitor, allowing for pre-emphasis driving without the need for a separate capacitor area, thereby reducing load capacitance by utilizing the metal lines as both data output pads and capacitors.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a separate capacitor is used for pre-emphasis driving, then pre-emphasis driving performance is improved, but device area is increased

Engineering Contradiction:
Improvepre-emphasis driving performanceVSAvoiddevice area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent merges the capacitor function with the output pad structure by forming a capacitor electrode pattern and an output pad electrode pattern in the same region. The capacitor electrode is formed between the output pad electrode and the lower electrode, creating an integrated structure that provides both signal output and pre-emphasis driving capabilities without requiring separate capacitor area.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The output pad region is designed to serve multiple functions: it acts as both the signal output pad and houses the capacitor structure for pre-emphasis driving. The capacitor electrode pattern and output pad electrode pattern share the same spatial region, allowing the device to perform both data transmission and signal strengthening functions within the same area.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If load capacitance on output pad is increased, then pre-emphasis driving effect is enhanced, but data transmission speed is reduced

Engineering Contradiction:
Improvepre-emphasis driving effectVSAvoiddata transmission speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The patent applies different electrical characteristics to different regions: the capacitor electrode region provides high capacitance for pre-emphasis effect, while the output pad electrode region maintains low capacitance for fast signal transmission. This localized differentiation allows the capacitor to provide pre-emphasis strengthening without adding parasitic capacitance that would slow down the data transmission on the output pad.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The insulating layer between the capacitor electrode and output pad electrode acts as an intermediary that electrically isolates the two structures. This allows the capacitor to provide pre-emphasis driving effect through coupling while preventing direct capacitive loading on the output pad, thus maintaining fast data transmission speed while achieving signal strengthening.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively reduces load capacitance on output pads, enabling efficient pre-emphasis driving and data transmission without occupying additional space for a separate capacitor, thus enhancing the performance and efficiency of semiconductor devices.

Implementation Method 1

a capacitor, wherein the capacitor comprises a first metal line 410 and a second metal line 420 formed as a stack to have an insulating layer 401 therebetween

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS9953921B2Semiconductor device and semiconductor package
Publication Date: 2018.04.24 SK HYNIX INC
  • US9953921B2 patent drawing
  • US9953921B2 patent drawing
  • US9953921B2 patent drawing

AI summary

A semiconductor device may include a first metal line; a second metal line; a first insulating layer formed between the first metal line and the second metal line; a first driving unit coupled to the first metal line, the first driving unit being suitable for driving the first metal line in response to first data; and a second driving unit coupled to the second metal line, the second driving unit being suitable for driving the second metal line in response to second data obtained by inverting and delaying the first data.