Semiconductor Overlay Measurement Using Multi-Wavelength Diffraction

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Solution Overview

Problem

Existing semiconductor manufacturing processes face challenges in accurately monitoring and ensuring the consistency of overlay between layers, leading to potential defects and reduced reliability due to systematic process errors and misalignment.

Innovation Solution

A method involving the use of diffraction-based overlay technology, where multiple wavelengths of light are selected based on an overlay spectrum to measure the consistency between layers, compensating for process errors by calculating overlay deviations and improving measurement reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional overlay measurement methods are used, then the manufacturing process can proceed, but measurement precision and reliability are insufficient due to systematic process errors

Engineering Contradiction:
Improveoverlay measurement precisionVSAvoidprocess monitoring reliability
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent changes the wavelength parameter of light used in overlay measurement. By selecting specific wavelengths from the visible spectrum (400-700nm) based on the overlay spectrum characteristics, the measurement system achieves higher precision and reliability. The wavelength selection is optimized to minimize the effects of systematic process errors such as overlay mark deformation and thickness variations.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent implements a feedback mechanism where the overlay spectrum is analyzed to determine the optimal wavelength for measurement. The measurement results are used to calculate overlay deviations, and this information feeds back into the manufacturing process to compensate for systematic errors. This closed-loop approach continuously improves measurement reliability.

Inventive Principle:
Principle #23Feedback

2Manufacturing precision

If single wavelength light is used for overlay measurement, then the process is simple, but measurement accuracy is reduced due to process errors

Engineering Contradiction:
Improveoverlay consistencyVSAvoidmeasurement system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent employs multiple wavelengths of light instead of a single wavelength for overlay measurement. By analyzing the overlay spectrum and selecting optimal wavelengths in the visible range, the system achieves superior measurement accuracy. The multi-wavelength approach compensates for process errors such as variations in overlay mark geometry and layer thickness that affect single-wavelength measurements.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the accuracy of overlay measurements, reduces errors, and improves the reliability of semiconductor device manufacturing by compensating for process-induced deviations, thereby ensuring better interlayer consistency.

Implementation Method 1

radiating a light having a wavelength band onto the semiconductor structure, diffracting the light to generate diffracted light

Methodology Applied
Scientific EffectDiffraction: Diffraction

Data Source

PatentUS11181831B2Methods of manufacturing semiconductor device
Publication Date: 2021.11.23 SAMSUNG ELECTRONICS CO LTD
  • US11181831B2 patent drawing
  • US11181831B2 patent drawing
  • US11181831B2 patent drawing

AI summary

A method of manufacturing a semiconductor device includes forming a plurality of overlay molds on a semiconductor structure by developing a photoresist material layer of the semiconductor structure, the semiconductor structure including a first layer having a plurality of overlay marks, the plurality of overlay molds at least partially overlapping at least some of the plurality of overlay marks; and measuring one or more overlays by radiating a light having a wavelength band onto the semiconductor structure, each of the one or more overlays indicating an amount of consistency of the first layer and a second layer of the semiconductor structure, the wavelength band being set based on the plurality of overlay marks and the plurality of overlay molds, the second layer being between the first layer and the photoresist material layer.