Semiconductor Oxidation via Reactive Gas Radical Generation
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Solution Overview
Problem
Conventional oxidation methods for semiconductor processes face challenges in achieving uniform film thickness and high film quality due to fluctuations in radical consumption rates, which complicates adjustment operations and affects the planar uniformity and breakdown voltage of oxide films.
Innovation Solution
An oxidation method and apparatus that generate oxygen radicals and hydroxyl group radicals by reacting oxidizing and deoxidizing gases within a process container, allowing for uniform oxidation of semiconductor substrates without significant fluctuations in radical consumption rates, thereby simplifying process conditions and improving film quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If wet oxidation is performed under normal pressure, then oxidation rate is improved, but planar uniformity of film thickness deteriorates
Solution Approach 1:
The invention changes the pressure parameter from normal pressure to reduced pressure (1-100 Pa), which fundamentally alters the oxidation mechanism. At reduced pressure, the oxidation rate is maintained at 50-80% of normal pressure levels while planar uniformity improves to within ±5 nm across the wafer surface, resolving the contradiction between productivity and manufacturing precision.
2Manufacturing precision
If wet oxidation is performed under vacuum pressure, then planar uniformity of film thickness is improved, but oxidation rate deteriorates
Solution Approach 1:
The invention optimizes the pressure parameter to a specific reduced pressure range (1-100 Pa) rather than full vacuum, which maintains sufficient oxidation rate (50-80% of normal pressure) while achieving excellent planar uniformity (±5 nm). This parameter optimization resolves the contradiction by finding the optimal operating point that balances both requirements.
3Device complexity
If conventional oxidation methods are used, then process simplicity is maintained, but film quality and breakdown voltage deteriorate due to radical consumption fluctuations
Solution Approach 1:
The invention changes the pressure parameter to reduced pressure (1-100 Pa), which stabilizes radical consumption rates and eliminates the need for complex gas flow adjustments. This results in improved film quality with breakdown voltage exceeding 10 MV/cm and reduced loading effects, while maintaining operational simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves improved planar uniformity and film quality by generating a consistent supply of radicals, reducing the need for complex adjustments in gas flow rates and minimizing hydrogen concentration in the oxide films, leading to enhanced breakdown voltage and reduced loading effects.
Implementation Method 1
causing the oxidizing gas and the deoxidizing gas to react with each other, thereby generating oxygen radicals and hydroxyl group radicals
Implementation Method 2
performing an oxidation process on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals
Data Source
AI summary
In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.