Semiconductor Device With Oxide Semiconductor And Insulator
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high integration, large storage capacity per area, high-speed writing and reading, low power consumption, and reliability, particularly in transistors used in display and memory devices.
Innovation Solution
A semiconductor device architecture is developed, incorporating a first and second transistor, a capacitor, and specific insulators and conductors, where the first semiconductor includes silicon and the second semiconductor includes indium, with a structure that allows for efficient oxygen management to reduce oxygen vacancies and enhance electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If amorphous silicon is used as semiconductor material, then large substrate compatibility is achieved, but field-effect mobility is insufficient for high-performance devices
Solution Approach 1:
The patent changes the material parameter from amorphous silicon to oxide semiconductor, which enables achieving high field-effect mobility while maintaining compatibility with large substrate formation techniques like sputtering
Solution Approach 2:
The patent uses a composite structure combining oxide semiconductor with insulating layers (such as silicon oxide, silicon nitride) to achieve both high mobility and stability, creating a hybrid material system that leverages advantages of different materials
2Speed
If polycrystalline silicon is used to achieve high field-effect mobility, then transistor performance improves, but manufacturing complexity and cost increase
Solution Approach 1:
The patent changes the semiconductor material parameter from polycrystalline silicon to oxide semiconductor, which can be formed using simpler sputtering processes without requiring high-temperature heat treatment or laser processing equipment
Solution Approach 2:
The patent adopts oxide semiconductor that can be formed using existing sputtering equipment already deployed for amorphous silicon production, avoiding the need for expensive new equipment investments required for polycrystalline silicon manufacturing
3Speed
If oxide semiconductor is used to achieve high field-effect mobility, then transistor performance improves, but oxygen vacancies cause electrical characteristic variation
Solution Approach 1:
The patent performs preliminary oxygen supply to the oxide semiconductor layer before transistor operation, using insulating layers with oxygen (such as silicon oxide) to pre-fill oxygen vacancies and stabilize electrical characteristics in advance
Solution Approach 2:
The patent introduces insulating layers containing oxygen (silicon oxide, silicon nitride) as intermediary materials between the oxide semiconductor and other structures, which act as oxygen reservoirs to supply oxygen to the semiconductor and reduce vacancies
4Quantity of substance
If transistor integration is increased to achieve high storage capacity, then device density improves, but power consumption and reliability challenges increase
Solution Approach 1:
The patent changes the semiconductor material to oxide semiconductor which inherently exhibits extremely low leakage current in the off state due to its wide bandgap, enabling high integration with reduced power consumption
Solution Approach 2:
The patent utilizes the intrinsic low-leakage property of oxide semiconductor transistors to achieve high integration density without proportionally increasing power consumption, effectively allowing more transistors to be packed while maintaining low energy consumption per device
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables a highly integrated semiconductor device with improved storage capacity, high-speed performance, low power consumption, and reliable operation by optimizing transistor design and materials, specifically silicon and indium, to enhance field-effect mobility and reduce defects.
Implementation Method 1
An oxide semiconductor can be formed by a sputtering method or the like
Data Source
AI summary
Provided is a highly integrated semiconductor device, a semiconductor device with large storage capacity with respect to an area occupied by a capacitor, a semiconductor device capable of high-speed writing, a semiconductor device capable of high-speed reading, a semiconductor device with low power consumption, or a highly reliable semiconductor device. The semiconductor device includes a first transistor, a second transistor, and a capacitor. A conductor penetrates and connects the first transistor, the capacitor, and the second transistor. An insulator is provided on a side surface of the conductor that penetrates the capacitor.