Semiconductor Device Oxide Layer Structure for High On-State Current
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high on-state current, excellent frequency characteristics, reliable electrical performance, miniaturization, high integration, and reduced power consumption while maintaining data retention and high-speed data writing capabilities.
Innovation Solution
A semiconductor device structure comprising specific layers of oxides and conductors with varying conductivities, including zinc-containing oxides, is implemented, with the third oxide having a higher conductivity than the second oxide and the fourth oxide having a crystalline structure, to enhance electrical characteristics and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor structures are used, then manufacturing simplicity is maintained, but on-state current and frequency characteristics are insufficient
Solution Approach 1:
The patent employs a composite oxide layer structure consisting of multiple oxide layers (first oxide layer, second oxide layer, third oxide layer) with different conductivity characteristics. This composite structure combines materials with varying electrical properties to achieve high on-state current while maintaining appropriate insulation and electrical performance, resolving the contradiction between improved reliability and increased device complexity.
Solution Approach 2:
Different oxide layers are assigned specific functional roles based on their local properties: the first oxide layer provides insulation, the second oxide layer provides a specific conductivity level, and the third oxide layer provides higher conductivity for enhanced on-state current. This local differentiation of material properties within the layered structure enables optimized electrical characteristics without requiring complete redesign of the entire device.
2Productivity
If device size is reduced for miniaturization, then integration density improves, but maintaining electrical characteristics becomes difficult
Solution Approach 1:
The patent utilizes parameter changes in the oxide layer structure, specifically varying the conductivity of different oxide layers through compositional adjustments and thickness control. The third oxide layer is designed with higher conductivity than the second oxide layer, enabling maintained electrical performance even as device dimensions are reduced for higher integration density.
3Use of energy by moving object
If power consumption is reduced, then energy efficiency improves, but on-state current and data writing speed may be affected
Solution Approach 1:
The layered oxide structure creates local electrical field optimization, where the third oxide layer with higher conductivity facilitates efficient charge transport for fast data writing, while the first and second oxide layers provide appropriate insulation and field control. This local differentiation enables reduced overall power consumption while maintaining high data writing speeds through optimized charge carrier pathways.
Data Source
AI summary
A semiconductor device having high on-state current and favorable reliability is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a first conductor over the third oxide; a second conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a third conductor positioned over the second insulator and overlapping with the second oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide, and the conductivity of the fourth oxide is higher than the conductivity of the second oxide.